All Transistors. MRF233 Datasheet

 

MRF233 Datasheet and Replacement


   Type Designator: MRF233
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 50 W
   Maximum Collector-Base Voltage |Vcb|: 36 V
   Maximum Collector-Emitter Voltage |Vce|: 18 V
   Maximum Emitter-Base Voltage |Veb|: 4 V
   Maximum Collector Current |Ic max|: 3.5 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Collector Capacitance (Cc): 100 pF
   Forward Current Transfer Ratio (hFE), MIN: 5
   Noise Figure, dB: -
   Package: X28
      - BJT Cross-Reference Search

   

MRF233 Datasheet (PDF)

 9.1. Size:241K  hgsemi
mrf235.pdf pdf_icon

MRF233

HG RF POWER TRANSISTORMRF235SemiconductorsHGROHS Compliance,Silicon NPN POWER TRANSISTORNPN Silicon RF power transistor MRF235Description: MRF235 is designed for 12.5V, mid-band large signal amplifier applications in industrial and commercial FM equipment operation in the 40-100MHz range. Mid band FM transistors. Features: Specified 12.5V, 90MHz characteristics Output Powe

Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2SD1047 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

History: ZTX531K | 3CG1182 | TMPT4403 | C5T4997 | KTC3542T | KRA526T | BFX97A

Keywords - MRF233 transistor datasheet

 MRF233 cross reference
 MRF233 equivalent finder
 MRF233 lookup
 MRF233 substitution
 MRF233 replacement

 

 
Back to Top

 


 
.