MRF233 Datasheet and Replacement
Type Designator: MRF233
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 50 W
Maximum Collector-Base Voltage |Vcb|: 36 V
Maximum Collector-Emitter Voltage |Vce|: 18 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 3.5 A
Max. Operating Junction Temperature (Tj): 200 °C
Collector Capacitance (Cc): 100 pF
Forward Current Transfer Ratio (hFE), MIN: 5
Noise Figure, dB: -
Package: X28
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MRF233 Datasheet (PDF)
mrf235.pdf

HG RF POWER TRANSISTORMRF235SemiconductorsHGROHS Compliance,Silicon NPN POWER TRANSISTORNPN Silicon RF power transistor MRF235Description: MRF235 is designed for 12.5V, mid-band large signal amplifier applications in industrial and commercial FM equipment operation in the 40-100MHz range. Mid band FM transistors. Features: Specified 12.5V, 90MHz characteristics Output Powe
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2SD1047 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
History: ZTX531K | 3CG1182 | TMPT4403 | C5T4997 | KTC3542T | KRA526T | BFX97A
Keywords - MRF233 transistor datasheet
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History: ZTX531K | 3CG1182 | TMPT4403 | C5T4997 | KTC3542T | KRA526T | BFX97A



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