All Transistors. MRF5175 Datasheet

 

MRF5175 Datasheet and Replacement


   Type Designator: MRF5175
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 12 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 33 V
   Maximum Emitter-Base Voltage |Veb|: 4 V
   Maximum Collector Current |Ic max|: 1 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Collector Capacitance (Cc): 15 pF
   Forward Current Transfer Ratio (hFE), MIN: 10
   Noise Figure, dB: -
   Package: X54D
 
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MRF5175 Datasheet (PDF)

 ..1. Size:32K  advanced-semi
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MRF5175

MRF5175NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MRF5175 is Designed for High Power Class C Amplifier in, 225 PACKAGE STYLE .280 4L STUD to 400 MHz Military Communication AEquipment. 45C FEATURES:B E E Class C Operation B C PG = 11 dB at 5.0 W/400 MHz DJ Omnigold Metalization System E IFGMAXIMUM RATINGS H#8-32 UNCK

Datasheet: MRF475 , MRF476 , MRF485 , MRF501 , MRF502 , MRF515 , MRF517 , MRF5174 , BC546 , MRF5176 , MRF5177 , MRF519 , MRF5211 , MRF5211LT1 , MRF525 , MRF531 , MRF571 .

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