MRF519 Datasheet, Equivalent, Cross Reference Search
Type Designator: MRF519
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 3 W
Maximum Collector-Base Voltage |Vcb|: 35 V
Maximum Collector-Emitter Voltage |Vce|: 25 V
Maximum Emitter-Base Voltage |Veb|: 3 V
Maximum Collector Current |Ic max|: 0.25 A
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 2200 MHz
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: TO39
MRF519 Transistor Equivalent Substitute - Cross-Reference Search
MRF519 Datasheet (PDF)
9.1. Size:32K advanced-semi
mrf5175.pdf
mrf5175.pdf
MRF5175NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MRF5175 is Designed for High Power Class C Amplifier in, 225 PACKAGE STYLE .280 4L STUD to 400 MHz Military Communication AEquipment. 45C FEATURES:B E E Class C Operation B C PG = 11 dB at 5.0 W/400 MHz DJ Omnigold Metalization System E IFGMAXIMUM RATINGS H#8-32 UNCK
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
