MRF519 Datasheet. Specs and Replacement
Type Designator: MRF519
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 3 W
Maximum Collector-Base Voltage |Vcb|: 35 V
Maximum Collector-Emitter Voltage |Vce|: 25 V
Maximum Emitter-Base Voltage |Veb|: 3 V
Maximum Collector Current |Ic max|: 0.25 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Transition Frequency (ft): 2200 MHz
Forward Current Transfer Ratio (hFE), MIN: 40
Package: TO39
MRF519 Substitution
- BJT ⓘ Cross-Reference Search
MRF519 datasheet
MRF5175 NPN SILICON RF POWER TRANSISTOR DESCRIPTION The ASI MRF5175 is Designed for High Power Class C Amplifier in, 225 PACKAGE STYLE .280 4L STUD to 400 MHz Military Communication A Equipment. 45 C FEATURES B E E Class C Operation B C PG = 11 dB at 5.0 W/400 MHz D J Omnigold Metalization System E I F G MAXIMUM RATINGS H #8-32 UNC K... See More ⇒
Detailed specifications: MRF501, MRF502, MRF515, MRF517, MRF5174, MRF5175, MRF5176, MRF5177, BD135, MRF5211, MRF5211LT1, MRF525, MRF531, MRF571, MRF5711, MRF5711LT1, MRF603
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