MRF5211LT1 Datasheet. Specs and Replacement
Type Designator: MRF5211LT1
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.333 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector-Emitter Voltage |Vce|: 10 V
Maximum Emitter-Base Voltage |Veb|: 2.5 V
Maximum Collector Current |Ic max|: 0.07 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 4200 MHz
Collector Capacitance (Cc): 1 pF
Forward Current Transfer Ratio (hFE), MIN: 25
Package: SOT143
MRF5211LT1 Substitution
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MRF5211LT1 datasheet
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBR521LT1/D The RF Line PNP Silicon MMBR521LT1 High-Frequency Transistor MRF5211LT1 Designed primarily for use in the high gain, low noise small signal amplifiers for operation up to 3.5 GHz. Also usable in applications requiring fast switching times. High Current Gain Bandwidth Product IC = 70 mA fT ... See More ⇒
Detailed specifications: MRF515, MRF517, MRF5174, MRF5175, MRF5176, MRF5177, MRF519, MRF5211, BC558, MRF525, MRF531, MRF571, MRF5711, MRF5711LT1, MRF603, MRF604, MRF607
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