All Transistors. MTC35-300 Datasheet

 

MTC35-300 Datasheet and Replacement


   Type Designator: MTC35-300
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 200 W
   Maximum Collector-Base Voltage |Vcb|: 325 V
   Maximum Collector-Emitter Voltage |Vce|: 250 V
   Maximum Emitter-Base Voltage |Veb|: 10 V
   Maximum Collector Current |Ic max|: 40 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Forward Current Transfer Ratio (hFE), MIN: 20
   Noise Figure, dB: -
   Package: TO3

 MTC35-300 Transistor Equivalent Substitute - Cross-Reference Search

   

MTC35-300 Datasheet (PDF)

 9.1. Size:408K  cystek
mtc3585g6.pdf pdf_icon

MTC35-300

Spec. No. C416G6 Issued Date 2007.07.13 CYStech Electronics Corp. Revised Date 2013.11.13 Page No. 1/13 N- AND P-Channel Enhancement Mode MOSFET N-CH P-CH MTC3585G6 BVDSS 20V -20V ID 4.5A(VGS=4.5V) -3A(VGS=-4.5 V) 27m (VGS=4.5V) 78m (VGS=-4.5V) RDSON(TYP.) 37m (VGS=2.5V) 115m (VGS=-2.5V) 82m (VGS=1.5V) 280m (VGS=-1.5V) Features Simple drive requirement ... See More ⇒

 9.2. Size:403K  cystek
mtc3585n6.pdf pdf_icon

MTC35-300

Spec. No. C416G6 Issued Date 2007.07.12 CYStech Electronics Corp. Revised Date 2013.09.06 Page No. 1/12 N- AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET N-CH P-CH MTC3585N6 BVDSS 20V -20V ID 4.5A(VGS=4.5V) -3A(VGS=-4.5 V) 27m (VGS=4.5V) 78m (VGS=-4.5V) RDSON(TYP.) 37m (VGS=2.5V) 115m (VGS=-2.5V) 82m (VGS=1.5V) 280m (VGS=-1.5V) Description The MTC3585N6 consist... See More ⇒

 9.3. Size:431K  cystek
mtc3586dfa6.pdf pdf_icon

MTC35-300

Spec. No. C835DFA6 Issued Date 2013.06.03 CYStech Electronics Corp. Revised Date 2013.10.30 Page No. 1/13 N- AND P-Channel Enhancement Mode MOSFET N-CH P-CH MTC3586DFA6 BVDSS 20V -20V ID 5A(VGS=4.5V) -3.3A(VGS=-4.5 V) 27m (VGS=4.5V) 78m (VGS=-4.5V) RDSON(TYP.) 37m (VGS=2.5V) 115m (VGS=-2.5V) Description 82m (VGS=1.5V) 280m (VGS=-1.5V) The MTC3586DFA6 consis... See More ⇒

 9.4. Size:498K  cystek
mtc3588n6.pdf pdf_icon

MTC35-300

Spec. No. C102N6 Issued Date 2015.08.13 CYStech Electronics Corp. Revised Date 2017.03.30 Page No. 1/12 N- And P-Channel Enhancement Mode Power MOSFET N-CH P-CH MTC3588N6 BVDSS 14V -14V ID @ TA=25 C 5.4A(VGS=4.5V) -3.6A(VGS=-4.5 V) 17.6m (VGS=4.5V) 45.1m (VGS=-4.5V) RDSON(TYP.) 24.7m (VGS=2.5V) 65.6m (VGS=-2.5V) Features Simple drive requirement ... See More ⇒

Datasheet: MT4103 , MT4104 , MT6001 , MT6002 , MT6003 , MT9001 , MT9002 , MT9003 , B772 , MUN2211LT1 , MUN2211LT2 , MUN2212LT1 , MUN2212LT2 , MUN2213LT1 , MUN2213LT2 , MUN2214LT1 , MUN2214LT2 .

History: KTC4082 | MRF847 | SUR496H | DK151 | CRYD918U | CS2641 | DK50

Keywords - MTC35-300 transistor datasheet

 MTC35-300 cross reference
 MTC35-300 equivalent finder
 MTC35-300 lookup
 MTC35-300 substitution
 MTC35-300 replacement

 

 
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