All Transistors. 2N4931S Datasheet

 

2N4931S Datasheet, Equivalent, Cross Reference Search

Type Designator: 2N4931S

Material of Transistor: Si

Polarity: PNP

Maximum Collector Power Dissipation (Pc): 1 W

Maximum Collector-Base Voltage |Vcb|: 250 V

Maximum Collector-Emitter Voltage |Vce|: 250 V

Maximum Emitter-Base Voltage |Veb|: 4 V

Maximum Collector Current |Ic max|: 0.5 A

Max. Operating Junction Temperature (Tj): 200 °C

Transition Frequency (ft): 20 MHz

Collector Capacitance (Cc): 20 pF

Forward Current Transfer Ratio (hFE), MIN: 20

Noise Figure, dB: -

Package: TO39-1

2N4931S Transistor Equivalent Substitute - Cross-Reference Search

 

2N4931S Datasheet (PDF)

8.1. 2n4928 2n4929 2n4930 2n4931.pdf Size:58K _central

2N4931S
2N4931S

145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824

8.2. 2n3743 2n4930 2n4931.pdf Size:55K _microsemi

2N4931S
2N4931S

TECHNICAL DATA PNP HIGH VOLTAGE SILICON TRANSISTOR Qualified per MIL-PRF-19500/397 Devices Qualified Level JAN, JANTX 2N3743 2N4930 2N4931 JANTXV MAXIMUM RATINGS Ratings Sym 2N3743 2N4930 2N4931 Unit Collector-Emitter Voltage 300 200 250 Vdc VCEO Collector-Base Voltage 300 200 250 Vdc VCBO Emitter-Base Voltage 5.0 Vdc VEBO Collector Current 200 mAdc IC Total

 9.1. 2n4939dcsm.pdf Size:9K _semelab

2N4931S

"2N4938DCSM"2N4939DCSMDimensions in mm (inches). Dual Bipolar PNP Devices in a hermetically sealed LCC2 Ceramic Surface Mount Package for High Reliability 1.40 0.152.29 0.20 1.65 0.13(0.055 0.006)(0.09 0.008) (0.065 0.005)Applications 2 314Dual Bipolar PNP Devices. A0.236 5rad. (0.009) V = 40V CEO6.22 0.13 A = 1.2

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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