All Transistors. 2N4931S Datasheet

 

2N4931S Datasheet and Replacement


   Type Designator: 2N4931S
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 1 W
   Maximum Collector-Base Voltage |Vcb|: 250 V
   Maximum Collector-Emitter Voltage |Vce|: 250 V
   Maximum Emitter-Base Voltage |Veb|: 4 V
   Maximum Collector Current |Ic max|: 0.5 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 20 MHz
   Collector Capacitance (Cc): 20 pF
   Forward Current Transfer Ratio (hFE), MIN: 20
   Noise Figure, dB: -
   Package: TO39-1
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2N4931S Datasheet (PDF)

 8.1. Size:58K  central
 2n4928 2n4929 2n4930 2n4931.pdf pdf_icon

2N4931S

145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824

 8.2. Size:55K  microsemi
 2n3743 2n4930 2n4931.pdf pdf_icon

2N4931S

TECHNICAL DATA PNP HIGH VOLTAGE SILICON TRANSISTOR Qualified per MIL-PRF-19500/397 Devices Qualified Level JAN, JANTX 2N3743 2N4930 2N4931 JANTXV MAXIMUM RATINGS Ratings Sym 2N3743 2N4930 2N4931 Unit Collector-Emitter Voltage 300 200 250 Vdc VCEO Collector-Base Voltage 300 200 250 Vdc VCBO Emitter-Base Voltage 5.0 Vdc VEBO Collector Current 200 mAdc IC Total

 9.1. Size:9K  semelab
 2n4939dcsm.pdf pdf_icon

2N4931S

"2N4938DCSM"2N4939DCSMDimensions in mm (inches). Dual Bipolar PNP Devices in a hermetically sealed LCC2 Ceramic Surface Mount Package for High Reliability 1.40 0.152.29 0.20 1.65 0.13(0.055 0.006)(0.09 0.008) (0.065 0.005)Applications 2 314Dual Bipolar PNP Devices. A0.236 5rad. (0.009) V = 40V CEO6.22 0.13 A = 1.2

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: 2SA350H | 2N258 | CTP3551 | 2N5811 | BT2944 | 2N677C | 2N3810DCSM

Keywords - 2N4931S transistor datasheet

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