NB021ET Datasheet. Specs and Replacement

Type Designator: NB021ET  📄📄 

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.6 W

Maximum Collector-Base Voltage |Vcb|: 40 V

Maximum Collector-Emitter Voltage |Vce|: 35 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.03 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 50 MHz

Collector Capacitance (Cc): 6 pF

Forward Current Transfer Ratio (hFE), MIN: 100

Noise Figure, dB: -

Package: TO92

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NB021ET datasheet

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Detailed specifications: NB014HV, NB014HY, NB014HZ, NB021E, NB021EI, NB021EJ, NB021EK, NB021EL, TIP142, NB021EU, NB021EV, NB021EY, NB021EZ, NB021F, NB021FI, NB021FJ, NB021FK

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