All Transistors. NB112E Datasheet

 

NB112E Datasheet, Equivalent, Cross Reference Search

Type Designator: NB112E

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 0.6 W

Maximum Collector-Base Voltage |Vcb|: 55 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 100 MHz

Collector Capacitance (Cc): 4 pF

Forward Current Transfer Ratio (hFE), MIN: 50

Noise Figure, dB: -

Package: TO92

NB112E Transistor Equivalent Substitute - Cross-Reference Search

 

NB112E Datasheet (PDF)

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Datasheet: NB111FI , NB111FJ , NB111FY , NB111H , NB111HH , NB111HI , NB111HJ , NB111HY , AC128 , NB112EH , NB112EI , NB112EJ , NB112EY , NB112F , NB112FH , NB112FI , NB112FJ .

 


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