2N4955 Specs and Replacement
Type Designator: 2N4955
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.45 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 25 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.03 A
Max. Operating Junction Temperature (Tj): 125 °C
Transition Frequency (ft): 60 MHz
Collector Capacitance (Cc): 6 pF
Forward Current Transfer Ratio (hFE), MIN: 150
Noise Figure, dB: -
Package: R137
2N4955 Substitution
2N4955 detailed specifications
2n4953.pdf
2N4953 NPN General Purpose Amplifier This device designed for use as general purpose amplifier and switches requiring collector currents to 500mA. Sourced from Process 10. TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings* Ta=25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 30 V VCBO C... See More ⇒
2n4957.pdf
Data Sheet No. 2N4957 Generic Part Number Type 2N4957 2N4957 Geometry 0006 Polarity PNP REF MIL-PRF-19500/426 Qual Level JAN - JANS Features Small signal RF silicon transistor designed for high-gain, low-noise applications. Housed in a TO-72 case. Also available in chip form using the 0006 chip geometry. The Min and Max limits shown are per MIL-PRF-19500/426 ... See More ⇒
2n4265 2n4400 2n4401 2n4402 2n4403 2n4409 2n4410 2n4424 2n4425 2n4951 2n4952 2n4953 2n4954 2n5087 2n5088 2n5089.pdf
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Detailed specifications: 2N4946 , 2N495 , 2N4950 , 2N4951 , 2N495-18 , 2N4952 , 2N4953 , 2N4954 , 2SA1837 , 2N4955-78 , 2N4956 , 2N4956-78 , 2N4957 , 2N4957UB , 2N4958 , 2N4958UB , 2N4959 .
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