2N5014 PDF and Equivalents Search

 

2N5014 PDF Specs and Replacement


   Type Designator: 2N5014
   Material of Transistor: Si
   Polarity: NPN

Absolute Maximum Ratings


   Maximum Collector Power Dissipation (Pc): 2 W
   Maximum Collector-Base Voltage |Vcb|: 900 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.5 A
   Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics


   Transition Frequency (ft): 20 MHz
   Collector Capacitance (Cc): 30 pF
   Forward Current Transfer Ratio (hFE), MIN: 30
   Noise Figure, dB: -
   Package: TO5
 

 2N5014 Substitution

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2N5014 PDF detailed specifications

 ..1. Size:15K  semelab
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2N5014

2N5014 MECHANICAL DATA Dimensions in mm (inches) SILICON EPITAXIAL NPN TRANSISTOR FEATURES General purpose power transistor for switch- ing and linear applications in a hermetic TO 39 package. ... See More ⇒

 ..2. Size:89K  ssdi
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2N5014

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 0.1. Size:55K  microsemi
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2N5014

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax (978) 689-0803 Website http //www.microsemi.com NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/727 DEVICES LEVELS 2N5010 2N5013 2N5010S 2N5013S JAN 2N5011 2N5014 2N5011S 2N5014S JANTX 2N5012 2N5015 2N5012S 2N5015S JANTXV ABSOLUTE MAXIMUM RATINGS (TC = +25 C unless otherwise note... See More ⇒

 9.1. Size:11K  semelab
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2N5014

2N5015 Dimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34) 9.40 (0.37) Hermetically sealed TO39 7.75 (0.305) 8.51 (0.335) Metal Package. 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 0.89 max. (0.035) 12.70 (0.500) min. 0.41 (0.016) 0.53 (0.021) VCEO = 1000V dia. IC = 0.5A 5.08 (0.200) typ. 2.54 All Semelab hermetically sealed products 2 (0.100) ... See More ⇒

Detailed specifications: 2N5008 , 2N5009 , 2N501 , 2N5010 , 2N5011 , 2N501-18 , 2N5012 , 2N5013 , 2N3055 , 2N5015 , 2N5015S , 2N5016 , 2N5017 , 2N501A , 2N502 , 2N5022 , 2N5023 .

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