2N502 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2N502
Material of Transistor: Ge
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.06 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Collector Current |Ic max|: 0.05 A
Max. Operating Junction Temperature (Tj): 85 °C
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 2 pF
Forward Current Transfer Ratio (hFE), MIN: 9
Noise Figure, dB: -
Package: TO9
2N502 Transistor Equivalent Substitute - Cross-Reference Search
2N502 Datasheet (PDF)
0.1. Size:73K central
2n5022 2n5023.pdf
2n5022 2n5023.pdf
145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824
0.2. Size:89K interfet
2n5020 2n5021.pdf
2n5020 2n5021.pdf
Databook.fxp 1/13/99 2:09 PM Page B-18B-18 01/992N5020, 2N5021P-Channel Silicon Junction Field-Effect TransistorAbsolute maximum ratings at TA = 25C Analog SwitchesReverse Gate Source & Reverse Gate Drain Voltage 50 VContinuous Forward Gate Current 50 mAContinuous Device Power Dissipation 500 mWPower Derating 4 mW/CStorage Temperature Range 65C to + 200CA
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
