2N5023S Datasheet, Equivalent, Cross Reference Search
Type Designator: 2N5023S
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 1200 MHz
Collector Capacitance (Cc): 25 pF
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: TO39
2N5023S Transistor Equivalent Substitute - Cross-Reference Search
2N5023S Datasheet (PDF)
8.1. Size:73K central
2n5022 2n5023.pdf
2n5022 2n5023.pdf
145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824
9.1. Size:89K interfet
2n5020 2n5021.pdf
2n5020 2n5021.pdf
Databook.fxp 1/13/99 2:09 PM Page B-18B-18 01/992N5020, 2N5021P-Channel Silicon Junction Field-Effect TransistorAbsolute maximum ratings at TA = 25C Analog SwitchesReverse Gate Source & Reverse Gate Drain Voltage 50 VContinuous Forward Gate Current 50 mAContinuous Device Power Dissipation 500 mWPower Derating 4 mW/CStorage Temperature Range 65C to + 200CA
Datasheet: 2N5015 , 2N5015S , 2N5016 , 2N5017 , 2N501A , 2N502 , 2N5022 , 2N5023 , 2SD718 , 2N5024 , 2N5025 , 2N5026 , 2N5027 , 2N5028 , 2N5029 , 2N502A , 2N502B .
