2N5023S Datasheet. Specs and Replacement

Type Designator: 2N5023S  📄📄 

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 1 W

Maximum Collector-Base Voltage |Vcb|: 30 V

Maximum Collector-Emitter Voltage |Vce|: 30 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 0.5 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Transition Frequency (ft): 1200 MHz

Collector Capacitance (Cc): 25 pF

Forward Current Transfer Ratio (hFE), MIN: 40

Noise Figure, dB: -

Package: TO39

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2N5023S datasheet

 8.1. Size:73K  central

 2n5022 2n5023.pdf pdf_icon

2N5023S

145 Adams Avenue, Hauppauge, NY 11788 USA Tel (631) 435-1110 Fax (631) 435-1824 ... See More ⇒

 9.1. Size:89K  interfet

 2n5020 2n5021.pdf pdf_icon

2N5023S

Databook.fxp 1/13/99 2 09 PM Page B-18 B-18 01/99 2N5020, 2N5021 P-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25 C Analog Switches Reverse Gate Source & Reverse Gate Drain Voltage 50 V Continuous Forward Gate Current 50 mA Continuous Device Power Dissipation 500 mW Power Derating 4 mW/ C Storage Temperature Range 65 C to + 200 C A... See More ⇒

Detailed specifications: 2N5015, 2N5015S, 2N5016, 2N5017, 2N501A, 2N502, 2N5022, 2N5023, 2SD718, 2N5024, 2N5025, 2N5026, 2N5027, 2N5028, 2N5029, 2N502A, 2N502B

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