All Transistors. NS664 Datasheet

 

NS664 Datasheet and Replacement


   Type Designator: NS664
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.36 W
   Maximum Collector-Base Voltage |Vcb|: 40 V
   Maximum Collector-Emitter Voltage |Vce|: 40 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.2 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 200 MHz
   Collector Capacitance (Cc): 4.5 pF
   Forward Current Transfer Ratio (hFE), MIN: 50
   Noise Figure, dB: -
      - BJT Cross-Reference Search

   

NS664 Datasheet (PDF)

 0.1. Size:362K  aosemi
 aons66402t.pdf pdf_icon

NS664

AONS66402TTM40V N-Channel AlphaSGTGeneral Description Product SummaryVDS40V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 224A Low RDS(ON) Logic Level Gate Drive RDS(ON) (at VGS=10V)

 0.2. Size:427K  aosemi
 aons66407.pdf pdf_icon

NS664

AONS66407TM40V N-Channel AlphaSGTGeneral Description Product SummaryVDS40V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 370A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)

 0.3. Size:414K  aosemi
 aons66408.pdf pdf_icon

NS664

AONS66408TM40V N-Channel AlphaSGTGeneral Description Product SummaryVDS40V Trench Power AlphaSGTTM technology ID (at VGS=10V) 85A Very Low RDS(ON) Excellent gate charge x RDS(ON) product (FOM) RDS(ON) (at VGS=10V)

 0.4. Size:415K  aosemi
 aons66415.pdf pdf_icon

NS664

AONS66415TM40V N-Channel AlphaSGTGeneral Description Product SummaryVDS40V AlphaSGTTM N-Channel Power MOSFET ID (at VGS=10V) 150A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)

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Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: BD239E | DTA144GUA | BC530 | 2SA1421 | CP107 | 2STC4467 | KRA761U

Keywords - NS664 transistor datasheet

 NS664 cross reference
 NS664 equivalent finder
 NS664 lookup
 NS664 substitution
 NS664 replacement

 

 
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