NS668 Specs and Replacement
Type Designator: NS668
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.36 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.2 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 200 MHz
Collector Capacitance (Cc): 4.5 pF
Forward Current Transfer Ratio (hFE), MIN: 50
Noise Figure, dB: -
NS668 Substitution
- BJT ⓘ Cross-Reference Search
NS668 datasheet
AONS66814 TM 80V N-Channel AlphaSGT2 General Description Product Summary VDS 80V AlphaSGT2TM N-Channel Power MOSFET ID (at VGS=10V) 310A Low RDS(ON) RDS(ON) (at VGS=10V) ... See More ⇒
AONS66811 TM 80V N-Channel AlphaSGT2 General Description Product Summary VDS 80V Trench Power AlphaSGT2TM technology ID (at VGS=10V) 287A Low RDS(ON) and optimized switching performance RoHS 2.0 and Halogen-Free Compliant RDS(ON) (at VGS=10V) ... See More ⇒
AONS66817 TM 80V N-Channel AlphaSGT2 General Description Product Summary VDS 80V AlphaSGTTM N-Channel Power MOSFET ID (at VGS=10V) 120A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒
Detailed specifications: NS475, NS479, NS6063, NS6065, NS6207, NS662, NS664, NS666, BC558, NS731A, NS733, NS9731, NSD102, NSD103, NSD104, NSD105, NSD106
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