All Transistors. NTE2349 Datasheet

 

NTE2349 Datasheet and Replacement


   Type Designator: NTE2349
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 300 W
   Maximum Collector-Base Voltage |Vcb|: 120 V
   Maximum Collector-Emitter Voltage |Vce|: 120 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 50 A
   Forward Current Transfer Ratio (hFE), MIN: 2000
   Noise Figure, dB: -
   Package: TO3

 NTE2349 Transistor Equivalent Substitute - Cross-Reference Search

   

NTE2349 Datasheet (PDF)

 9.1. Size:210K  inchange semiconductor
 nte2393.pdf pdf_icon

NTE2349

INCHANGE Semiconductor isc N-Channel MOSFET Transistor NTE2393 FEATURES With TO-3PN packaging High speed switching Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER... See More ⇒

Datasheet: NTE2338 , NTE2340 , NTE2341 , NTE2342 , NTE2343 , NTE2344 , NTE2345 , NTE2346 , 2SD669A , NTE2350 , NTE2351 , NTE2352 , NTE2401 , NTE2402 , NTE2403 , NTE2404 , NTE2405 .

History: QM5HG-24 | QS6Z5 | KRA722E | KRA221M | QSL11 | QSX3 | KRA106M

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