OD603-50 pdf Datasheet and Replacements, Transistor Equivalent Finder, Cross Reference

OD603-50 Specs and Replacement

Type Designator: OD603-50

Material of Transistor: Ge

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 8 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 30 V

Maximum Collector Current |Ic max|: 3 A

Max. Operating Junction Temperature (Tj): 110 °C

Electrical Characteristics

Transition Frequency (ft): 0.1 MHz

Forward Current Transfer Ratio (hFE), MIN: 25

Noise Figure, dB: -

Package: SPECIAL

OD603-50 Substitution

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OD603-50 datasheet

9.1. Size:392K aosemi

aod603a.pdf pdf_icon

AOD603A 60V Complementary MOSFET General Description Product Summary N-Channel P-Channel The AOD603A uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate VDS= 60V -60V charge. The complementary MOSFETs may be ID= 13A (VGS=10V) -13A (VGS=-10V) used in H-bridge, Inverters and other applications. RDS(ON) RDS(ON) ... See More ⇒

9.2. Size:940K cn vbsemi

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AOD603A www.VBsemi.tw N- and P-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Available 0.030 at VGS = 10 V 35 TrenchFET Power MOSFET N-Channel 60 6 nC 0.033 at VGS = 4.5 V 30 100 % Rg and UIS Tested 0.050 at VGS = - 10 V - 19 APPLICATIONS P-Channel - 60 8 nC 0.060 at VGS = - ... See More ⇒

Detailed specifications: OC870, OC871, OC872, OC880, OC881, OC882, OC883, OD603, BC546, OD604, P201AE, P201E, P202E, P203E, P207, P207A, P208