2N5070 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2N5070
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 70 W
Maximum Collector-Base Voltage |Vcb|: 65 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 85 pF
Forward Current Transfer Ratio (hFE), MIN: 10
Noise Figure, dB: -
Package: TO62
Datasheet: 2N5059S , 2N506 , 2N5065 , 2N5066 , 2N5067 , 2N5068 , 2N5069 , 2N507 , BC549 , 2N5071 , 2N5072 , 2N5073 , 2N5074 , 2N5075 , 2N5076 , 2N5077 , 2N5079 .