P607 Datasheet. Specs and Replacement

Type Designator: P607  📄📄 

Material of Transistor: Ge

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 1.5 W

Maximum Collector-Base Voltage |Vcb|: 30 V

Maximum Emitter-Base Voltage |Veb|: 1 V

Maximum Collector Current |Ic max|: 1.5 A

Max. Operating Junction Temperature (Tj): 75 °C

Electrical Characteristics

Transition Frequency (ft): 60 MHz

Collector Capacitance (Cc): 50 pF

Forward Current Transfer Ratio (hFE), MIN: 20

Noise Figure, dB: -

 P607 Substitution

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P607 datasheet

 0.1. Size:993K  russia

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P607

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 0.2. Size:2040K  stansontech

 stp607d.pdf pdf_icon

P607

STP607D P Channel Enhancement Mode MOSFET -10.0A DESCRIPTION STP607D is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. The STP607D has been designed specially to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been ... See More ⇒

Detailed specifications: P417B, P422, P423, P6009, P605, P605A, P606, P606A, TIP122, P607A, P608, P608A, P609, P609A, P633567, P7009, P701

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