PBF259RS Datasheet. Specs and Replacement
Type Designator: PBF259RS 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.625 W
Maximum Collector-Base Voltage |Vcb|: 300 V
Maximum Collector-Emitter Voltage |Vce|: 300 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 40M MHz
Collector Capacitance (Cc): 3 pF
Forward Current Transfer Ratio (hFE), MIN: 60
Package: TO92
PBF259RS Substitution
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PBF259RS datasheet
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by PBF259/D High Voltage Transistors NPN Silicon PBF259 PBF259S COLLECTOR 3 2 BASE 1 EMITTER 1 MAXIMUM RATINGS 2 3 Rating Symbol PBF259,S Unit CASE 29 04, STYLE 1 Collector Emitter Voltage VCEO 300 Vdc TO 92 (TO 226AA) Collector Base Voltage VCBO 300 Vdc Emitter Base Voltage VEBO 5.0 Vdc Collector Curre... See More ⇒
Detailed specifications: PBC108, PBC109, PBC182, PBC182R, PBC183, PBC184, PBF259, PBF259R, BD335, PBF259S, PBF493, PBF493R, PBF493RS, PBF493S, PE3100, PE4010, PE5025
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