PBF259RS Datasheet, Equivalent, Cross Reference Search
Type Designator: PBF259RS
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.625 W
Maximum Collector-Base Voltage |Vcb|: 300 V
Maximum Collector-Emitter Voltage |Vce|: 300 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 40M MHz
Collector Capacitance (Cc): 3 pF
Forward Current Transfer Ratio (hFE), MIN: 60
Noise Figure, dB: -
Package: TO92
PBF259RS Transistor Equivalent Substitute - Cross-Reference Search
PBF259RS Datasheet (PDF)
7.1. Size:133K motorola
pbf259re.pdf
pbf259re.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby PBF259/DHigh Voltage TransistorsNPN Silicon PBF259PBF259SCOLLECTOR32BASE1EMITTER1MAXIMUM RATINGS23Rating Symbol PBF259,S UnitCASE 2904, STYLE 1CollectorEmitter Voltage VCEO 300 VdcTO92 (TO226AA)CollectorBase Voltage VCBO 300 VdcEmitterBase Voltage VEBO 5.0 VdcCollector Curre
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
