PBF259S Datasheet. Specs and Replacement
Type Designator: PBF259S 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.625 W
Maximum Collector-Base Voltage |Vcb|: 300 V
Maximum Collector-Emitter Voltage |Vce|: 300 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 50M MHz
Collector Capacitance (Cc): 3 pF
Forward Current Transfer Ratio (hFE), MIN: 60
Package: TO92
PBF259S Substitution
- BJT ⓘ Cross-Reference Search
PBF259S datasheet
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by PBF259/D High Voltage Transistors NPN Silicon PBF259 PBF259S COLLECTOR 3 2 BASE 1 EMITTER 1 MAXIMUM RATINGS 2 3 Rating Symbol PBF259,S Unit CASE 29 04, STYLE 1 Collector Emitter Voltage VCEO 300 Vdc TO 92 (TO 226AA) Collector Base Voltage VCBO 300 Vdc Emitter Base Voltage VEBO 5.0 Vdc Collector Curre... See More ⇒
Detailed specifications: PBC109, PBC182, PBC182R, PBC183, PBC184, PBF259, PBF259R, PBF259RS, A940, PBF493, PBF493R, PBF493RS, PBF493S, PE3100, PE4010, PE5025, PE5029
Keywords - PBF259S pdf specs
PBF259S cross reference
PBF259S equivalent finder
PBF259S pdf lookup
PBF259S substitution
PBF259S replacement
