PMD13K100 Datasheet, Equivalent, Cross Reference Search
Type Designator: PMD13K100
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 100 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 8 A
Max. Operating Junction Temperature (Tj): 200 °C
Forward Current Transfer Ratio (hFE), MIN: 800
Noise Figure, dB: -
Package: TO3
PMD13K100 Transistor Equivalent Substitute - Cross-Reference Search
PMD13K100 Datasheet (PDF)
pmd13k100.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlingtion Power Transistor PMD13K100 DESCRIPTION High DC current gain Collector-Emitter Breakdown Voltage- V(BR)CEO= -100V(Min) Complement to type PMD12K100 APPLICATIONSDesigned for general purpose amplifier and DC motor control applications. ABSOLUTE MAXIMUM RATINGS(TC=25) SYMBOL PARAMETER VALU
pmd13k80.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlingtion Power Transistor PMD13K80 DESCRIPTION High DC current gain Collector-Emitter Breakdown Voltage- V(BR)CEO= -80V(Min) Complement to type PMD12K80 APPLICATIONSDesigned for general purpose amplifier and DC motor control applications. ABSOLUTE MAXIMUM RATINGS(TC=25) SYMBOL PARAMETER VALUE U
Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N3055 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .
