PMD13K100 Datasheet. Specs and Replacement

Type Designator: PMD13K100  📄📄 

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 100 W

Maximum Collector-Base Voltage |Vcb|: 100 V

Maximum Collector-Emitter Voltage |Vce|: 100 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 8 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 800

Noise Figure, dB: -

Package: TO3

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PMD13K100 datasheet

 ..1. Size:198K  inchange semiconductor

 pmd13k100.pdf pdf_icon

PMD13K100

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlingtion Power Transistor PMD13K100 DESCRIPTION High DC current gain Collector-Emitter Breakdown Voltage- V(BR)CEO= -100V(Min) Complement to type PMD12K100 APPLICATIONS Designed for general purpose amplifier and DC motor control applications. ABSOLUTE MAXIMUM RATINGS(TC=25 ) SYMBOL PARAMETER VALU... See More ⇒

 8.1. Size:199K  inchange semiconductor

 pmd13k80.pdf pdf_icon

PMD13K100

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlingtion Power Transistor PMD13K80 DESCRIPTION High DC current gain Collector-Emitter Breakdown Voltage- V(BR)CEO= -80V(Min) Complement to type PMD12K80 APPLICATIONS Designed for general purpose amplifier and DC motor control applications. ABSOLUTE MAXIMUM RATINGS(TC=25 ) SYMBOL PARAMETER VALUE U... See More ⇒

Detailed specifications: PMD11K100, PMD11K40, PMD11K60, PMD11K80, PMD12K100, PMD12K40, PMD12K60, PMD12K80, B647, PMD13K40, PMD13K60, PMD13K80, PMD15K200, PMD1600K, PMD1601K, PMD1602K, PMD1603K

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