PMD15K200 Datasheet and Replacement
Type Designator: PMD15K200
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 150 W
Maximum Collector-Base Voltage |Vcb|: 200 V
Maximum Collector-Emitter Voltage |Vce|: 200 V
Maximum Emitter-Base Voltage |Veb|: 2 V
Maximum Collector Current |Ic max|: 14 A
Max. Operating Junction Temperature (Tj): 200 °C
Forward Current Transfer Ratio (hFE), MIN: 300
Noise Figure, dB: -
Package: TO3
PMD15K200 Substitution
PMD15K200 Datasheet (PDF)
mpmd150b120rh.pdf

MPMD150B120RH NPT & Rugged Type 1200V IGBT Module General Description Features MagnaChips IGBT Module 7DM-3 package BV = 1200V CES Low Conduction Loss : V = 2.8V (typ.) CE(sat)devices are optimized to reduce losses and Fast & Soft Anti-Parallel FWD switching noise in high frequency power Short circuit rated : Min. 10us at TC=100 Isolation Typ
Datasheet: PMD12K100 , PMD12K40 , PMD12K60 , PMD12K80 , PMD13K100 , PMD13K40 , PMD13K60 , PMD13K80 , BC547 , PMD1600K , PMD1601K , PMD1602K , PMD1603K , PMD16K100 , PMD16K40 , PMD16K60 , PMD16K80 .
History: 2SC4170
Keywords - PMD15K200 transistor datasheet
PMD15K200 cross reference
PMD15K200 equivalent finder
PMD15K200 lookup
PMD15K200 substitution
PMD15K200 replacement
History: 2SC4170



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