All Transistors. PMD15K200 Datasheet

 

PMD15K200 Datasheet and Replacement


   Type Designator: PMD15K200
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 150 W
   Maximum Collector-Base Voltage |Vcb|: 200 V
   Maximum Collector-Emitter Voltage |Vce|: 200 V
   Maximum Emitter-Base Voltage |Veb|: 2 V
   Maximum Collector Current |Ic max|: 14 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Forward Current Transfer Ratio (hFE), MIN: 300
   Noise Figure, dB: -
   Package: TO3
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PMD15K200 Datasheet (PDF)

 9.1. Size:1231K  magnachip
 mpmd150b120rh.pdf pdf_icon

PMD15K200

MPMD150B120RH NPT & Rugged Type 1200V IGBT Module General Description Features MagnaChips IGBT Module 7DM-3 package BV = 1200V CES Low Conduction Loss : V = 2.8V (typ.) CE(sat)devices are optimized to reduce losses and Fast & Soft Anti-Parallel FWD switching noise in high frequency power Short circuit rated : Min. 10us at TC=100 Isolation Typ

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History: 2SA1051A | 2N1227 | 2SB464 | MMBT4122 | XB114 | 2SA843 | 2N1963

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