PMD15K200 Datasheet. Specs and Replacement
Type Designator: PMD15K200 📄📄
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 150 W
Maximum Collector-Base Voltage |Vcb|: 200 V
Maximum Collector-Emitter Voltage |Vce|: 200 V
Maximum Emitter-Base Voltage |Veb|: 2 V
Maximum Collector Current |Ic max|: 14 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 300
Package: TO3
PMD15K200 Substitution
- BJT ⓘ Cross-Reference Search
PMD15K200 datasheet
MPMD150B120RH NPT & Rugged Type 1200V IGBT Module General Description Features MagnaChip s IGBT Module 7DM-3 package BV = 1200V CES Low Conduction Loss V = 2.8V (typ.) CE(sat) devices are optimized to reduce losses and Fast & Soft Anti-Parallel FWD switching noise in high frequency power Short circuit rated Min. 10us at TC=100 Isolation Typ... See More ⇒
Detailed specifications: PMD12K100, PMD12K40, PMD12K60, PMD12K80, PMD13K100, PMD13K40, PMD13K60, PMD13K80, BDT88, PMD1600K, PMD1601K, PMD1602K, PMD1603K, PMD16K100, PMD16K40, PMD16K60, PMD16K80
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