PN2369 Datasheet, Equivalent, Cross Reference Search
Type Designator: PN2369
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.36 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 15 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 0.2 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 500 MHz
Collector Capacitance (Cc): 4 pF
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: TO92
PN2369 Transistor Equivalent Substitute - Cross-Reference Search
PN2369 Datasheet (PDF)
pn2369 pn2369a 3.pdf
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D186PN2369; PN2369ANPN switching transistors1999 Apr 14Product specificationSupersedes data of 1997 May 07Philips Semiconductors Product specificationNPN switching transistors PN2369; PN2369AFEATURES PINNING Low current (max. 200 mA)PIN DESCRIPTION Low voltage (max. 15 V).1 collector2 baseAPPLICATIONS3 e
pn2369.pdf
PN2369NPN Switching Transistor This device is designed for high speed saturated switching at collector currents of 10mA to 100mA. Sourced from process 21.TO-9211. Emitter 2. Base 3. CollectorAbsolute Maximum Ratings* Ta=25C unless otherwise noted Symbol Parameter Ratings UnitsVCEO Collector-Emitter Voltage 15 VVCBO Collector-Base Voltage 40 VVEBO Emitter-Base Vol
mmbt2369 pn2369.pdf
February 2008MMBT2369 / PN2369NPN Switching Transistor This device is designed for high speed saturated switching at collector currents of 10mA to 100mA. Sourced from process 21.MMBT2369 PN2369CESOT-23BTO-921Mark: 1J1. Emitter 2. Base 3. CollectorAbsolute Maximum Ratings * Ta = 25C unless otherwise noted Symbol Parameter Ratings UnitsVCEO Collector-Emit
pn2369.pdf
Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyPN2369NPN SILICON HIGH SPEED SWITHCHING TRANSISTORSTO-92Plastic PackageCBELOW POWER FOR HIGH SPEED SWITCHING APPLICATIONSABSOLUTE MAXIMUM RATINGS (Ta=25C unless specified otherwise)DESCRIPTION SYMBOL VALUE UNITVCEOCollector Emitter Voltage 15 VVCBOCollector Base Voltage 40 V
pn2369a mmbt2369a.pdf
PN2369A MMBT2369ACEC TO-92BSOT-23BEMark: 1SNPN Switching TransistorThis device is designed for high speed saturated switching at collectorcurrents of 10 mA to 100 mA. Sourced from Process 21.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 15 VVCBO Collector-Base Voltage 40 VVEBO Emitter-Base Vo
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: BF262
