PN2369 - Даташиты. Аналоги. Основные параметры

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 PN2369; PN2369A NPN switching transistors 1999 Apr 14 Product specification Supersedes data of 1997 May 07 Philips Semiconductors Product specification NPN switching transistors PN2369; PN2369A FEATURES PINNING Low current (max. 200 mA) PIN DESCRIPTION Low voltage (max. 15 V). 1 collector 2 base APPLICATIONS 3 e

PN2369 NPN Switching Transistor This device is designed for high speed saturated switching at collector currents of 10mA to 100mA. Sourced from process 21. TO-92 1 1. Emitter 2. Base 3. Collector Absolute Maximum Ratings* Ta=25 C unless otherwise noted Symbol Parameter Ratings Units VCEO Collector-Emitter Voltage 15 V VCBO Collector-Base Voltage 40 V VEBO Emitter-Base Vol

February 2008 MMBT2369 / PN2369 NPN Switching Transistor This device is designed for high speed saturated switching at collector currents of 10mA to 100mA. Sourced from process 21. MMBT2369 PN2369 C E SOT-23 B TO-92 1 Mark 1J 1. Emitter 2. Base 3. Collector Absolute Maximum Ratings * Ta = 25 C unless otherwise noted Symbol Parameter Ratings Units VCEO Collector-Emit

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PN2369 NPN SILICON HIGH SPEED SWITHCHING TRANSISTORS TO-92 Plastic Package C B E LOW POWER FOR HIGH SPEED SWITCHING APPLICATIONS ABSOLUTE MAXIMUM RATINGS (Ta=25 C unless specified otherwise) DESCRIPTION SYMBOL VALUE UNIT VCEO Collector Emitter Voltage 15 V VCBO Collector Base Voltage 40 V

PN2369A MMBT2369A C E C TO-92 B SOT-23 B E Mark 1S NPN Switching Transistor This device is designed for high speed saturated switching at collector currents of 10 mA to 100 mA. Sourced from Process 21. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 15 V VCBO Collector-Base Voltage 40 V VEBO Emitter-Base Vo