PN2369 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PN2369
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.36 W
Tensión colector-base (Vcb): 40 V
Tensión colector-emisor (Vce): 15 V
Tensión emisor-base (Veb): 4 V
Corriente del colector DC máxima (Ic): 0.2 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 500 MHz
Capacitancia de salida (Cc): 4 pF
Ganancia de corriente contínua (hfe): 40
Paquete / Cubierta: TO92
Búsqueda de reemplazo de transistor bipolar PN2369
PN2369 Datasheet (PDF)
pn2369 pn2369a 3.pdf
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D186PN2369; PN2369ANPN switching transistors1999 Apr 14Product specificationSupersedes data of 1997 May 07Philips Semiconductors Product specificationNPN switching transistors PN2369; PN2369AFEATURES PINNING Low current (max. 200 mA)PIN DESCRIPTION Low voltage (max. 15 V).1 collector2 baseAPPLICATIONS3 e
pn2369.pdf
PN2369NPN Switching Transistor This device is designed for high speed saturated switching at collector currents of 10mA to 100mA. Sourced from process 21.TO-9211. Emitter 2. Base 3. CollectorAbsolute Maximum Ratings* Ta=25C unless otherwise noted Symbol Parameter Ratings UnitsVCEO Collector-Emitter Voltage 15 VVCBO Collector-Base Voltage 40 VVEBO Emitter-Base Vol
mmbt2369 pn2369.pdf
February 2008MMBT2369 / PN2369NPN Switching Transistor This device is designed for high speed saturated switching at collector currents of 10mA to 100mA. Sourced from process 21.MMBT2369 PN2369CESOT-23BTO-921Mark: 1J1. Emitter 2. Base 3. CollectorAbsolute Maximum Ratings * Ta = 25C unless otherwise noted Symbol Parameter Ratings UnitsVCEO Collector-Emit
pn2369.pdf
Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyPN2369NPN SILICON HIGH SPEED SWITHCHING TRANSISTORSTO-92Plastic PackageCBELOW POWER FOR HIGH SPEED SWITCHING APPLICATIONSABSOLUTE MAXIMUM RATINGS (Ta=25C unless specified otherwise)DESCRIPTION SYMBOL VALUE UNITVCEOCollector Emitter Voltage 15 VVCBOCollector Base Voltage 40 V
pn2369a mmbt2369a.pdf
PN2369A MMBT2369ACEC TO-92BSOT-23BEMark: 1SNPN Switching TransistorThis device is designed for high speed saturated switching at collectorcurrents of 10 mA to 100 mA. Sourced from Process 21.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 15 VVCBO Collector-Base Voltage 40 VVEBO Emitter-Base Vo
Otros transistores... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 13009 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
