PN5130 Datasheet, Equivalent, Cross Reference Search
Type Designator: PN5130
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 12 V
Maximum Emitter-Base Voltage |Veb|: 1 V
Maximum Collector Current |Ic max|: 0.05 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 450 MHz
Collector Capacitance (Cc): 3 pF
Forward Current Transfer Ratio (hFE), MIN: 12
Noise Figure, dB: -
Package: TO92
PN5130 Transistor Equivalent Substitute - Cross-Reference Search
PN5130 Datasheet (PDF)
pn5134.pdf
PN5134NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300mA.TO-9211. Emitter 2. Base 3. CollectorAbsolute Maximum Ratings* TA=25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 10 VVCBO Collector-Base Voltage 20 VVEBO Emitter-Base Voltage 3.5 VI
pn5138.pdf
Discrete POWER & SignalTechnologiesPN5138C TO-92BEPNP General Purpose AmplifierThis device is designed for use as general purpose amplifiersand switches requiring collector currents to 300 mA. Sourcedfrom Process 68. See PN200 for characteristics.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 30 VV
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
