All Transistors. PN5130 Datasheet

 

PN5130 Datasheet and Replacement


   Type Designator: PN5130
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Base Voltage |Vcb|: 30 V
   Maximum Collector-Emitter Voltage |Vce|: 12 V
   Maximum Emitter-Base Voltage |Veb|: 1 V
   Maximum Collector Current |Ic max|: 0.05 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 450 MHz
   Collector Capacitance (Cc): 3 pF
   Forward Current Transfer Ratio (hFE), MIN: 12
   Noise Figure, dB: -
   Package: TO92
 

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PN5130 Datasheet (PDF)

 9.1. Size:28K  fairchild semi
 pn5134.pdf pdf_icon

PN5130

PN5134NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300mA.TO-9211. Emitter 2. Base 3. CollectorAbsolute Maximum Ratings* TA=25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 10 VVCBO Collector-Base Voltage 20 VVEBO Emitter-Base Voltage 3.5 VI

 9.2. Size:293K  fairchild semi
 pn5138.pdf pdf_icon

PN5130

Discrete POWER & SignalTechnologiesPN5138C TO-92BEPNP General Purpose AmplifierThis device is designed for use as general purpose amplifiersand switches requiring collector currents to 300 mA. Sourcedfrom Process 68. See PN200 for characteristics.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 30 VV

Datasheet: PN4890 , PN4916 , PN4917 , PN4964 , PN4965 , PN5127 , PN5128 , PN5129 , D667 , PN5131 , PN5132 , PN5133 , PN5134 , PN5135 , PN5136 , PN5137 , PN5138 .

History: PN5179 | MJE32B | CHIMH8GP | KRA153F | MMBT918 | MMBTA93 | 2SC3773-3

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