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PN5130 Specs and Replacement


   Type Designator: PN5130
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Base Voltage |Vcb|: 30 V
   Maximum Collector-Emitter Voltage |Vce|: 12 V
   Maximum Emitter-Base Voltage |Veb|: 1 V
   Maximum Collector Current |Ic max|: 0.05 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 450 MHz
   Collector Capacitance (Cc): 3 pF
   Forward Current Transfer Ratio (hFE), MIN: 12
   Noise Figure, dB: -
   Package: TO92

 PN5130 Transistor Equivalent Substitute - Cross-Reference Search

   

PN5130 detailed specifications

 9.1. Size:28K  fairchild semi
 pn5134.pdf pdf_icon

PN5130

PN5134 NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300mA. TO-92 1 1. Emitter 2. Base 3. Collector Absolute Maximum Ratings* TA=25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 10 V VCBO Collector-Base Voltage 20 V VEBO Emitter-Base Voltage 3.5 V I... See More ⇒

 9.2. Size:293K  fairchild semi
 pn5138.pdf pdf_icon

PN5130

Discrete POWER & Signal Technologies PN5138 C TO-92 B E PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 68. See PN200 for characteristics. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 30 V V ... See More ⇒

Detailed specifications: PN4890 , PN4916 , PN4917 , PN4964 , PN4965 , PN5127 , PN5128 , PN5129 , BC547B , PN5131 , PN5132 , PN5133 , PN5134 , PN5135 , PN5136 , PN5137 , PN5138 .

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