PN5131 Datasheet, Equivalent, Cross Reference Search
Type Designator: PN5131
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector-Emitter Voltage |Vce|: 15 V
Maximum Emitter-Base Voltage |Veb|: 3 V
Maximum Collector Current |Ic max|: 0.2 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 6 pF
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
Package: TO92
PN5131 Transistor Equivalent Substitute - Cross-Reference Search
PN5131 Datasheet (PDF)
pn5134.pdf
PN5134NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300mA.TO-9211. Emitter 2. Base 3. CollectorAbsolute Maximum Ratings* TA=25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 10 VVCBO Collector-Base Voltage 20 VVEBO Emitter-Base Voltage 3.5 VI
pn5138.pdf
Discrete POWER & SignalTechnologiesPN5138C TO-92BEPNP General Purpose AmplifierThis device is designed for use as general purpose amplifiersand switches requiring collector currents to 300 mA. Sourcedfrom Process 68. See PN200 for characteristics.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 30 VV
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
