All Transistors. PT517 Datasheet

 

PT517 Datasheet and Replacement


   Type Designator: PT517
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.8 W
   Maximum Collector-Base Voltage |Vcb|: 120 V
   Maximum Collector-Emitter Voltage |Vce|: 80 V
   Maximum Emitter-Base Voltage |Veb|: 3 V
   Maximum Collector Current |Ic max|: 0.3 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Transition Frequency (ft): 70 MHz
   Collector Capacitance (Cc): 8 pF
   Forward Current Transfer Ratio (hFE), MIN: 10
   Noise Figure, dB: -
   Package: TO5
 

 PT517 Substitution

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PT517 Datasheet (PDF)

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PT517

CMPT5179www.centralsemi.comSURFACE MOUNTDESCRIPTION:NPN SILICON RF TRANSISTORThe CENTRAL SEMICONDUCTOR CMPT5179 type is an NPN silicon RF transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for low noise, high frequency amplifier and high output oscillator applications.MARKING CODE: C7HSOT-23 CASEMAXIMUM RATINGS: (TA

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SC4793 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: PUMB11 | 2N2790 | PTB20009 | PT896

Keywords - PT517 transistor datasheet

 PT517 cross reference
 PT517 equivalent finder
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