PT517 Specs and Replacement

Type Designator: PT517

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.8 W

Maximum Collector-Base Voltage |Vcb|: 120 V

Maximum Collector-Emitter Voltage |Vce|: 80 V

Maximum Emitter-Base Voltage |Veb|: 3 V

Maximum Collector Current |Ic max|: 0.3 A

Max. Operating Junction Temperature (Tj): 175 °C

Electrical Characteristics

Transition Frequency (ft): 70 MHz

Collector Capacitance (Cc): 8 pF

Forward Current Transfer Ratio (hFE), MIN: 10

Noise Figure, dB: -

Package: TO5

 PT517 Substitution

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PT517 datasheet

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PT517

CMPT5179 www.centralsemi.com SURFACE MOUNT DESCRIPTION NPN SILICON RF TRANSISTOR The CENTRAL SEMICONDUCTOR CMPT5179 type is an NPN silicon RF transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for low noise, high frequency amplifier and high output oscillator applications. MARKING CODE C7H SOT-23 CASE MAXIMUM RATINGS (TA... See More ⇒

Detailed specifications: PO38, PO39, PT1837, PT2896, PT3151A, PT3501, PT515, PT516, 2SC1815, PT518, PT519, PT520, PT522, PT523, PT530, PT530-1, PT530A

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