All Transistors. PT517 Datasheet

 

PT517 Datasheet, Equivalent, Cross Reference Search


   Type Designator: PT517
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.8 W
   Maximum Collector-Base Voltage |Vcb|: 120 V
   Maximum Collector-Emitter Voltage |Vce|: 80 V
   Maximum Emitter-Base Voltage |Veb|: 3 V
   Maximum Collector Current |Ic max|: 0.3 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Transition Frequency (ft): 70 MHz
   Collector Capacitance (Cc): 8 pF
   Forward Current Transfer Ratio (hFE), MIN: 10
   Noise Figure, dB: -
   Package: TO5

 PT517 Transistor Equivalent Substitute - Cross-Reference Search

   

PT517 Datasheet (PDF)

 0.1. Size:323K  central
 cmpt5179.pdf

PT517 PT517

CMPT5179www.centralsemi.comSURFACE MOUNTDESCRIPTION:NPN SILICON RF TRANSISTORThe CENTRAL SEMICONDUCTOR CMPT5179 type is an NPN silicon RF transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for low noise, high frequency amplifier and high output oscillator applications.MARKING CODE: C7HSOT-23 CASEMAXIMUM RATINGS: (TA

Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , BC557 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

 

 
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