PTB20081 Specs and Replacement

Type Designator: PTB20081

SMD Transistor Code: 20081

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 233 W

Maximum Collector-Base Voltage |Vcb|: 65 V

Maximum Collector-Emitter Voltage |Vce|: 40 V

Maximum Emitter-Base Voltage |Veb|: 4 V

Maximum Collector Current |Ic max|: 12 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 470 MHz

Collector Capacitance (Cc): 25 pF

Forward Current Transfer Ratio (hFE), MIN: 20

Noise Figure, dB: -

Package: 20212

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PTB20081 datasheet

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Detailed specifications: PTB20052, PTB20053, PTB20060, PTB20062, PTB20071, PTB20074, PTB20077, PTB20078, BDT88, PTB20082, PTB20091, PTB20095, PTB20097, PTB20101, PTB20105, PTB20110, PTB20111

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