R8305 Datasheet. Specs and Replacement

Type Designator: R8305  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.36 W

Maximum Collector-Base Voltage |Vcb|: 40 V

Maximum Collector-Emitter Voltage |Vce|: 30 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 250 MHz

Collector Capacitance (Cc): 8 pF

Forward Current Transfer Ratio (hFE), MIN: 60

Noise Figure, dB: -

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R8305 datasheet

 0.1. Size:162K  fairchild semi

 fdr8305n.pdf pdf_icon

R8305

November 1999 FDR8305N Dual N-Channel 2.5V Specified PowerTrench MOSFET General Description Features These N-Channel 2.5V specified MOSFETs are produced 4.5 A, 20 V. RDS(ON) = 0.022 @ VGS = 4.5 V using Fairchild Semiconductor's advanced PowerTrench RDS(ON) = 0.028 @ VGS = 2.5 V. process that has been especially tailored to minimize the on-state resis... See More ⇒

Detailed specifications: R7249, R7360, R7887, R8066, R8070, R8118, R8224, R8259, 2SC2383, R8552, R8556, R8647, R8915, R8966, R9006, RCA1000, RCA1001

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