All Transistors. R8305 Datasheet

 

R8305 Datasheet and Replacement


   Type Designator: R8305
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.36 W
   Maximum Collector-Base Voltage |Vcb|: 40 V
   Maximum Collector-Emitter Voltage |Vce|: 30 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 250 MHz
   Collector Capacitance (Cc): 8 pF
   Forward Current Transfer Ratio (hFE), MIN: 60
   Noise Figure, dB: -

 R8305 Transistor Equivalent Substitute - Cross-Reference Search

   

R8305 Datasheet (PDF)

 0.1. Size:162K  fairchild semi
 fdr8305n.pdf pdf_icon

R8305

November 1999 FDR8305N Dual N-Channel 2.5V Specified PowerTrench MOSFET General Description Features These N-Channel 2.5V specified MOSFETs are produced 4.5 A, 20 V. RDS(ON) = 0.022 @ VGS = 4.5 V using Fairchild Semiconductor's advanced PowerTrench RDS(ON) = 0.028 @ VGS = 2.5 V. process that has been especially tailored to minimize the on-state resis... See More ⇒

Datasheet: R7249 , R7360 , R7887 , R8066 , R8070 , R8118 , R8224 , R8259 , 2SC2383 , R8552 , R8556 , R8647 , R8915 , R8966 , R9006 , RCA1000 , RCA1001 .

History: DDTC114EKA | 2SC4106N | KN2222AS | MPQ3640 | KRA316E | KM905 | UN521K

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