S1502 Datasheet and Replacement
Type Designator: S1502
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.36 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 250 MHz
Collector Capacitance (Cc): 8 pF
Forward Current Transfer Ratio (hFE), MIN: 60
Noise Figure, dB: -
S1502 Substitution
S1502 Datasheet (PDF)
pbls1502y-v.pdf

PBLS1502Y; PBLS1502V15 V PNP BISS loadswitchRev. 02 4 November 2004 Product data sheet1. Product profile1.1 General descriptionLow VCEsat PNP transistor and NPN resistor-equipped transistor in one package.Table 1: Product overviewType number PackagePhilips EIAJPBLS1502Y SOT363 SC-88PBLS1502V SOT666 -1.2 Features Low VCEsat (BISS) transistor and resistor-equipped tran
mdis1502th.pdf

MDIS1502 Single N-channel Trench MOSFET 30V, 45.7A, 8.5mGeneral Description Features The MDIS1502 uses advanced MagnaChips MOSFET V = 30V DSTechnology, which provides high performance in on-state I = 45.7A @V = 10V D GSresistance, fast switching performance and excellent R DS(ON) (MAX)quality. MDIS1502 is suitable device for DC to DC
Datasheet: S1376 , S1377 , S1381 , S1382 , S1383 , S1420 , S1423 , S1429-3 , 2N2222A , S1516 , S1525 , S1530 , S15649 , S1619 , S1642 , S1683 , S1697 .
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