S1502 Datasheet, Equivalent, Cross Reference Search
Type Designator: S1502
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.36 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 250 MHz
Collector Capacitance (Cc): 8 pF
Forward Current Transfer Ratio (hFE), MIN: 60
Noise Figure, dB: -
S1502 Transistor Equivalent Substitute - Cross-Reference Search
S1502 Datasheet (PDF)
pbls1502y-v.pdf
PBLS1502Y; PBLS1502V15 V PNP BISS loadswitchRev. 02 4 November 2004 Product data sheet1. Product profile1.1 General descriptionLow VCEsat PNP transistor and NPN resistor-equipped transistor in one package.Table 1: Product overviewType number PackagePhilips EIAJPBLS1502Y SOT363 SC-88PBLS1502V SOT666 -1.2 Features Low VCEsat (BISS) transistor and resistor-equipped tran
mdis1502th.pdf
MDIS1502 Single N-channel Trench MOSFET 30V, 45.7A, 8.5mGeneral Description Features The MDIS1502 uses advanced MagnaChips MOSFET V = 30V DSTechnology, which provides high performance in on-state I = 45.7A @V = 10V D GSresistance, fast switching performance and excellent R DS(ON) (MAX)quality. MDIS1502 is suitable device for DC to DC
Datasheet: 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , BD777 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
History: 2SC6136
