S1502 Specs and Replacement
Type Designator: S1502
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.36 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 250 MHz
Collector Capacitance (Cc): 8 pF
Forward Current Transfer Ratio (hFE), MIN: 60
Noise Figure, dB: -
S1502 Substitution
- BJT ⓘ Cross-Reference Search
S1502 datasheet
PBLS1502Y; PBLS1502V 15 V PNP BISS loadswitch Rev. 02 4 November 2004 Product data sheet 1. Product profile 1.1 General description Low VCEsat PNP transistor and NPN resistor-equipped transistor in one package. Table 1 Product overview Type number Package Philips EIAJ PBLS1502Y SOT363 SC-88 PBLS1502V SOT666 - 1.2 Features Low VCEsat (BISS) transistor and resistor-equipped tran... See More ⇒
MDIS1502 Single N-channel Trench MOSFET 30V, 45.7A, 8.5m General Description Features The MDIS1502 uses advanced MagnaChip s MOSFET V = 30V DS Technology, which provides high performance in on-state I = 45.7A @V = 10V D GS resistance, fast switching performance and excellent R DS(ON) (MAX) quality. MDIS1502 is suitable device for DC to DC ... See More ⇒
Detailed specifications: S1376, S1377, S1381, S1382, S1383, S1420, S1423, S1429-3, 2SC1815, S1516, S1525, S1530, S15649, S1619, S1642, S1683, S1697
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