S876T Specs and Replacement
Type Designator: S876T
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 110 W
Maximum Collector-Base Voltage |Vcb|: 1200 V
Maximum Collector-Emitter Voltage |Vce|: 530 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 12 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 7 MHz
Collector Capacitance (Cc): 150 pF
Forward Current Transfer Ratio (hFE), MIN: 10
Package: TO220
S876T Substitution
- BJT ⓘ Cross-Reference Search
S876T datasheet
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Detailed specifications: S679T, S690T, S691T, S730T, S763T, S779T, S790T, S791T, 13007, S879T, S920TS, S921TS, S922TS, S923TS, S93B, S93V, S979T
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