SE6001 Datasheet and Replacement
Type Designator: SE6001
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 125 °C
Transition Frequency (ft): 100M MHz
Collector Capacitance (Cc): 25 pF
Forward Current Transfer Ratio (hFE), MIN: 50
Noise Figure, dB: -
Package: TO106
SE6001 Substitution
SE6001 Datasheet (PDF)
se6003c.pdf

SE6003CN-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesThigh Density Cell Design For Ultra Low For a single MOSFETOn-Resistance Fully Characterized Avalanche V =60VDSVoltage and Current Improved Shoot-Through R =85m @V =10VDS(ON) GSFOM R =105m @V =4.5VDS(ON) GS Simple Drive Requirement Small Package Outline Surface
Datasheet: SE5024 , SE5-0253 , SE5050 , SE5051 , SE5052 , SE5055 , SE5-0854 , SE5-567 , 2SC2383Y , SE6002 , SE6010 , SE6020 , SE6021 , SE6022 , SE6023 , SE6062 , SE6063 .
History: AD143-6 | BLX14 | NB222HY | 3DD71 | BF208 | SRA2201EF | KC636
Keywords - SE6001 transistor datasheet
SE6001 cross reference
SE6001 equivalent finder
SE6001 lookup
SE6001 substitution
SE6001 replacement
History: AD143-6 | BLX14 | NB222HY | 3DD71 | BF208 | SRA2201EF | KC636



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