SE6001 Specs and Replacement

Type Designator: SE6001

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.3 W

Maximum Collector-Base Voltage |Vcb|: 40 V

Maximum Collector-Emitter Voltage |Vce|: 30 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 125 °C

Electrical Characteristics

Transition Frequency (ft): 100M MHz

Collector Capacitance (Cc): 25 pF

Forward Current Transfer Ratio (hFE), MIN: 50

Noise Figure, dB: -

Package: TO106

 SE6001 Substitution

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SE6001 datasheet

 9.1. Size:325K  cn sino-ic

 se6003c.pdf pdf_icon

SE6001

SE6003C N-Channel Enhancement-Mode MOSFET Revision A General Description Features Thigh Density Cell Design For Ultra Low For a single MOSFET On-Resistance Fully Characterized Avalanche V =60V DS Voltage and Current Improved Shoot-Through R =85m @V =10V DS(ON) GS FOM R =105m @V =4.5V DS(ON) GS Simple Drive Requirement Small Package Outline Surface ... See More ⇒

Detailed specifications: SE5024, SE5-0253, SE5050, SE5051, SE5052, SE5055, SE5-0854, SE5-567, 2SC5198, SE6002, SE6010, SE6020, SE6021, SE6022, SE6023, SE6062, SE6063

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