All Transistors. SE6001 Datasheet

 

SE6001 Datasheet and Replacement


   Type Designator: SE6001
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.3 W
   Maximum Collector-Base Voltage |Vcb|: 40 V
   Maximum Collector-Emitter Voltage |Vce|: 30 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 125 °C
   Transition Frequency (ft): 100M MHz
   Collector Capacitance (Cc): 25 pF
   Forward Current Transfer Ratio (hFE), MIN: 50
   Noise Figure, dB: -
   Package: TO106
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SE6001 Datasheet (PDF)

 9.1. Size:325K  cn sino-ic
 se6003c.pdf pdf_icon

SE6001

SE6003CN-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesThigh Density Cell Design For Ultra Low For a single MOSFETOn-Resistance Fully Characterized Avalanche V =60VDSVoltage and Current Improved Shoot-Through R =85m @V =10VDS(ON) GSFOM R =105m @V =4.5VDS(ON) GS Simple Drive Requirement Small Package Outline Surface

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: BSW38 | ZX5T853G | 2SC1353 | CMLT4413 | UNR221L | 2N2969 | DTD114E

Keywords - SE6001 transistor datasheet

 SE6001 cross reference
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