All Transistors. SE8520 Datasheet

 

SE8520 Datasheet and Replacement


   Type Designator: SE8520
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.3 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 0.6 A
   Max. Operating Junction Temperature (Tj): 125 °C
   Transition Frequency (ft): 100 MHz
   Collector Capacitance (Cc): 20 pF
   Forward Current Transfer Ratio (hFE), MIN: 40
   Noise Figure, dB: -
   Package: TO106
 
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SE8520 Datasheet (PDF)

 9.1. Size:588K  cn sino-ic
 se85210.pdf pdf_icon

SE8520

SE85210N-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesThigh Density Cell Design For Ultra Low For a single MOSFETOn-Resistance Fully Characterized Avalanche V =85VDSVoltage and Current Improved Shoot-Through R =3.0m @V =10VDS(ON) GSFOM Simple Drive Requirement Small Package Outline Surface Mount DevicePin configurationsS

Datasheet: SE7055 , SE7056 , SE8001 , SE8002 , SE8010 , SE8041 , SE8042 , SE8510 , 2SC5198 , SE8521 , SE8541 , SE8542 , SE9300 , SE9301 , SE9302 , SE9400 , SE9401 .

History: 2SC969

Keywords - SE8520 transistor datasheet

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