SGS122 Datasheet and Replacement
Type Designator: SGS122
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 65 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 175 °C
Forward Current Transfer Ratio (hFE), MIN: 1000
Noise Figure, dB: -
Package: TO126
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SGS122 Datasheet (PDF)
sgs125.pdf

SGS125SILICON PNP POWER DARLINGTON TRANSISTOR SGS-THOMSON PREFERRED SALESTYPE PNP DARLINGTON INTEGRATED ANTIPARALLELCOLLECTOR-EMITTER DIODEAPPLICATION GENERAL PURPOSE SWITCHING DESCRIPTION 3The SGS125 is a silicon epitaxial-base PNP21transistor in monolithic Darlington configuration inSOT82 plastic package, intented for use in powerSOT-82linear and switching ap
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: 2STA1962 | ZTX303K | GN4F3R | HN1C01F | MMS8550 | 3DG5088 | UN9110S
Keywords - SGS122 transistor datasheet
SGS122 cross reference
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History: 2STA1962 | ZTX303K | GN4F3R | HN1C01F | MMS8550 | 3DG5088 | UN9110S



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