All Transistors. SGSD100 Datasheet

 

SGSD100 Datasheet and Replacement


   Type Designator: SGSD100
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 130 W
   Maximum Collector-Base Voltage |Vcb|: 80 V
   Maximum Collector-Emitter Voltage |Vce|: 80 V
   Maximum Collector Current |Ic max|: 25 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Forward Current Transfer Ratio (hFE), MIN: 300
   Noise Figure, dB: -
   Package: TOP3
 

 SGSD100 Substitution

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SGSD100 Datasheet (PDF)

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 sgsd100-200.pdf pdf_icon

SGSD100

SGSD100SGSD200COMPLEMENTARY SILICONPOWER DARLINGTON TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES MONOLITHIC DARLINGTONCONFIGURATIONAPPLICATIONS: GENERAL PURPOSE SWITCHINGAPPLICATION3 GENERAL PURPOSE AMPLIFIERS21DESCRIPTIONThe SGSD100 is silicon epitaxial-base NPNTO-218power transistor in monolithic Darlingtonconfiguration mou

Datasheet: SGS137 , SGS3055 , SGS6386 , SGS6387 , SGS6388 , SGS911 , SGS912 , SGSD00020 , S8550 , SGSD110 , SGSD200 , SGSD210 , SGSD93E , SGSD93F , SGSD93G , SGSF321 , SGSF323 .

History: 2SC1061 | 2SC3182N | BU409 | 2SC3542 | BDX24 | 2SD215 | KSA1378-0

Keywords - SGSD100 transistor datasheet

 SGSD100 cross reference
 SGSD100 equivalent finder
 SGSD100 lookup
 SGSD100 substitution
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