SGSD100 Specs and Replacement
Type Designator: SGSD100
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 130 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Collector Current |Ic max|: 25 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 300
Package: TOP3
SGSD100 Substitution
- BJT ⓘ Cross-Reference Search
SGSD100 datasheet
SGSD100 SGSD200 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES MONOLITHIC DARLINGTON CONFIGURATION APPLICATIONS GENERAL PURPOSE SWITCHING APPLICATION 3 GENERAL PURPOSE AMPLIFIERS 2 1 DESCRIPTION The SGSD100 is silicon epitaxial-base NPN TO-218 power transistor in monolithic Darlington configuration mou... See More ⇒
Detailed specifications: SGS137, SGS3055, SGS6386, SGS6387, SGS6388, SGS911, SGS912, SGSD00020, B772, SGSD110, SGSD200, SGSD210, SGSD93E, SGSD93F, SGSD93G, SGSF321, SGSF323
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