All Transistors. SGSD110 Datasheet

 

SGSD110 Datasheet and Replacement


   Type Designator: SGSD110
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 130 W
   Maximum Collector-Base Voltage |Vcb|: 80 V
   Maximum Collector-Emitter Voltage |Vce|: 80 V
   Maximum Collector Current |Ic max|: 25 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Forward Current Transfer Ratio (hFE), MIN: 15
   Noise Figure, dB: -
   Package: TOP3
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SGSD110 Datasheet (PDF)

 9.1. Size:76K  st
 sgsd100-200.pdf pdf_icon

SGSD110

SGSD100SGSD200COMPLEMENTARY SILICONPOWER DARLINGTON TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES MONOLITHIC DARLINGTONCONFIGURATIONAPPLICATIONS: GENERAL PURPOSE SWITCHINGAPPLICATION3 GENERAL PURPOSE AMPLIFIERS21DESCRIPTIONThe SGSD100 is silicon epitaxial-base NPNTO-218power transistor in monolithic Darlingtonconfiguration mou

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

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