SGSD110 Datasheet, Equivalent, Cross Reference Search
Type Designator: SGSD110
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 130 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Collector Current |Ic max|: 25 A
Max. Operating Junction Temperature (Tj): 175 °C
Forward Current Transfer Ratio (hFE), MIN: 15
Noise Figure, dB: -
Package: TOP3
SGSD110 Transistor Equivalent Substitute - Cross-Reference Search
SGSD110 Datasheet (PDF)
sgsd100-200.pdf
SGSD100SGSD200COMPLEMENTARY SILICONPOWER DARLINGTON TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES MONOLITHIC DARLINGTONCONFIGURATIONAPPLICATIONS: GENERAL PURPOSE SWITCHINGAPPLICATION3 GENERAL PURPOSE AMPLIFIERS21DESCRIPTIONThe SGSD100 is silicon epitaxial-base NPNTO-218power transistor in monolithic Darlingtonconfiguration mou
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
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