All Transistors. SGSD110 Datasheet

 

SGSD110 Datasheet and Replacement


   Type Designator: SGSD110
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 130 W
   Maximum Collector-Base Voltage |Vcb|: 80 V
   Maximum Collector-Emitter Voltage |Vce|: 80 V
   Maximum Collector Current |Ic max|: 25 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Forward Current Transfer Ratio (hFE), MIN: 15
   Noise Figure, dB: -
   Package: TOP3
 

 SGSD110 Substitution

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SGSD110 Datasheet (PDF)

 9.1. Size:76K  st
 sgsd100-200.pdf pdf_icon

SGSD110

SGSD100SGSD200COMPLEMENTARY SILICONPOWER DARLINGTON TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES MONOLITHIC DARLINGTONCONFIGURATIONAPPLICATIONS: GENERAL PURPOSE SWITCHINGAPPLICATION3 GENERAL PURPOSE AMPLIFIERS21DESCRIPTIONThe SGSD100 is silicon epitaxial-base NPNTO-218power transistor in monolithic Darlingtonconfiguration mou

Datasheet: SGS3055 , SGS6386 , SGS6387 , SGS6388 , SGS911 , SGS912 , SGSD00020 , SGSD100 , BC546 , SGSD200 , SGSD210 , SGSD93E , SGSD93F , SGSD93G , SGSF321 , SGSF323 , SGSF324 .

History: BF266 | 2SC4005 | 2N3906BU | 2SC1293 | BTC2030A3 | GET535 | FTC2412K

Keywords - SGSD110 transistor datasheet

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