All Transistors. SK3182 Datasheet

 

SK3182 Datasheet and Replacement


   Type Designator: SK3182
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 100 W
   Maximum Collector-Base Voltage |Vcb|: 80 V
   Maximum Collector-Emitter Voltage |Vce|: 80 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 10 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 10 MHz
   Collector Capacitance (Cc): 35 pF
   Forward Current Transfer Ratio (hFE), MIN: 35
   Noise Figure, dB: -
   Package: TO3
 

 SK3182 Substitution

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SK3182 Datasheet (PDF)

 9.1. Size:184K  renesas
 3sk318.pdf pdf_icon

SK3182

3SK318 Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier REJ03G0819-0200 (Previous ADE-208-600) Rev.2.00 Aug.10.2005 Features Low noise characteristics; (NF= 1.4 dB typ. at f= 900 MHz) Excellent cross modulation characteristics Capable low voltage operation; +B= 5V Outline RENESAS Package code: PTSP0004ZA-A(Package name: CMPAK-4) 231. Source2.

Datasheet: SK3010 , SK3011 , SK3012 , SK3026 , SK3040 , SK3054 , SK3114 , SK3137 , D882 , SK3194 , SK3218 , SK3247 , SK3260 , SK3270 , SK3356 , SK3441 , SK3511 .

History: MJD31CT4A

Keywords - SK3182 transistor datasheet

 SK3182 cross reference
 SK3182 equivalent finder
 SK3182 lookup
 SK3182 substitution
 SK3182 replacement

 

 
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