SK3182 Specs and Replacement

Type Designator: SK3182

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 100 W

Maximum Collector-Base Voltage |Vcb|: 80 V

Maximum Collector-Emitter Voltage |Vce|: 80 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 10 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Transition Frequency (ft): 10 MHz

Collector Capacitance (Cc): 35 pF

Forward Current Transfer Ratio (hFE), MIN: 35

Noise Figure, dB: -

Package: TO3

 SK3182 Substitution

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SK3182 datasheet

 9.1. Size:184K  renesas

 3sk318.pdf pdf_icon

SK3182

3SK318 Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier REJ03G0819-0200 (Previous ADE-208-600) Rev.2.00 Aug.10.2005 Features Low noise characteristics; (NF= 1.4 dB typ. at f= 900 MHz) Excellent cross modulation characteristics Capable low voltage operation; +B= 5V Outline RENESAS Package code PTSP0004ZA-A (Package name CMPAK-4) 2 3 1. Source 2. ... See More ⇒

Detailed specifications: SK3010, SK3011, SK3012, SK3026, SK3040, SK3054, SK3114, SK3137, BC337, SK3194, SK3218, SK3247, SK3260, SK3270, SK3356, SK3441, SK3511

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