STC5553 Datasheet and Replacement
Type Designator: STC5553
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 85 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 1 MHz
Forward Current Transfer Ratio (hFE), MIN: 10
Noise Figure, dB: -
Package: TO61
STC5553 Substitution
STC5553 Datasheet (PDF)
stc5551f.pdf

STC5551FNPN Silicon TransistorPIN Connection Descriptions General purpose amplifier High voltage application Features High collector breakdown voltage : VCBO = 180V, VCEO = 160V Low collector saturation voltage SOT-89 : VCE(sat)=0.5V(MAX.) Ordering Information Type No. Marking Package Code N51 STC5551F SOT-89 YWW N51: DEVICE CODE, : hF
Datasheet: STC5081 , STC5082 , STC5083 , STC5084 , STC5085 , STC5550 , STC5551 , STC5552 , 13001-A , STC5554 , STC5555 , STC5606 , STC5608 , STC5648 , STC5649 , STC5650 , STC5651 .
History: BFG33 | AF430 | NB321H | RT1N151U | MPQ5856 | CRT1592 | 2SC5509
Keywords - STC5553 transistor datasheet
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History: BFG33 | AF430 | NB321H | RT1N151U | MPQ5856 | CRT1592 | 2SC5509



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