T2144
Datasheet, Equivalent, Cross Reference Search
Type Designator: T2144
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.15
W
Maximum Collector-Base Voltage |Vcb|: 25
V
Maximum Collector-Emitter Voltage |Vce|: 25
V
Maximum Collector Current |Ic max|: 0.05
A
Max. Operating Junction Temperature (Tj): 140
°C
Transition Frequency (ft): 6
MHz
Collector Capacitance (Cc): 12
pF
Forward Current Transfer Ratio (hFE), MIN: 10
Noise Figure, dB: -
Package:
TO1
T2144
Transistor Equivalent Substitute - Cross-Reference Search
T2144
Datasheet (PDF)
0.1. Size:320K 1
aot2144l aob2144l.pdf 
AOT2144L/AOB2144L40V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MV MOSFET technology 40V Low RDS(ON) ID (at VGS=10V) 120 A Low Gate Charge RDS(ON) (at VGS=10V)
0.2. Size:384K aosemi
aot2144l.pdf
AOT2144L/AOB2144L40V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MV MOSFET technology 40V Low RDS(ON) ID (at VGS=10V) 120 A Low Gate Charge RDS(ON) (at VGS=10V)
0.3. Size:259K inchange semiconductor
aot2144l.pdf
isc N-Channel MOSFET Transistor AOT2144LFEATURESDrain Current I = 120A@ T =25D CDrain Source Voltage-: V = 40V(Min)DSSStatic Drain-Source On-Resistance: R = 2.3m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp
Datasheet: 2N3200
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