TA1756
Datasheet, Equivalent, Cross Reference Search
Type Designator: TA1756
Material of Transistor: Ge
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.08
W
Maximum Collector-Base Voltage |Vcb|: 34
V
Maximum Collector-Emitter Voltage |Vce|: 34
V
Maximum Emitter-Base Voltage |Veb|: 1
V
Maximum Collector Current |Ic max|: 0.01
A
Max. Operating Junction Temperature (Tj): 120
°C
Transition Frequency (ft): 42
MHz
Collector Capacitance (Cc): 3
pF
Forward Current Transfer Ratio (hFE), MIN: 60
Noise Figure, dB: -
Package:
TO7
TA1756
Transistor Equivalent Substitute - Cross-Reference Search
TA1756
Datasheet (PDF)
9.1. Size:28K kec
kta1759.pdf
SEMICONDUCTOR KTA1759TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORHIGH VOLTAGE APPLICATION. FEATURES High Breakdown Voltage.ACHGDIM MILLIMETERSA 4.70 MAX_+B 2.50 0.20MAXIMUM RATING (Ta=25)C 1.70 MAXDDD 0.45+0.15/-0.10CHARACTERISTIC SYMBOL RATING UNITKE 4.25 MAX_+F F F 1.50 0.10VCBO -400 VCollector-Base VoltageG 0.40 TYPH 1.75 MAXVC
9.2. Size:258K cystek
bta1759n3.pdf
Spec. No. : C309N3 Issued Date : 2003.05.09 CYStech Electronics Corp.Revised Date : 2010.10.19 Page No. : 1/6 High Voltage PNP Epitaxial Planar Transistor BVCEO -400VBTA1759N3IC -0.3AVCESAT(TYP) -0.08VDescription High breakdown voltage. (BV =-400V) CEO Low saturation voltage, typical V =-0.2V at Ic/I =-20mA/-2mA. CE(sat) B Wide SOA (safe operation area).
9.3. Size:233K cystek
bta1759a3.pdf
Spec. No. : C309A3-R Issued Date : 2003.10.15 CYStech Electronics Corp.Revised Date : 2012.06.14 Page No. : 1/6 High Voltage PNP Epitaxial Planar Transistor BTA1759A3Description High breakdown voltage. (BV =-400V) CEO Low saturation voltage, typical V = -0.2V at Ic / I = -20mA /-2mA. CE(sat) B Wide SOA (safe operation area). Complementary to BTC4505A3.
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