All Transistors. TA2510 Datasheet

 

TA2510 Datasheet and Replacement


   Type Designator: TA2510
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 35 W
   Maximum Collector-Base Voltage |Vcb|: 250 V
   Maximum Collector-Emitter Voltage |Vce|: 175 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 1 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 10 MHz
   Forward Current Transfer Ratio (hFE), MIN: 40
   Noise Figure, dB: -
   Package: TO66
 

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TA2510 Datasheet (PDF)

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TA2510

2STA2510High power PNP epitaxial planar bipolar transistorFeatures High breakdown voltage VCEO = -100 V Complementary to 2STC2510 Typical ft = 20 MHz Fully characterized at 125 oC32Application1TO-3P Audio power amplifierDescriptionFigure 1. Internal schematic diagramThe device is a PNP transistor manufactured using new BiT-LA (Bipolar transistor fo

Datasheet: TA2468A , TA2469A , TA2470 , TA2492 , TA2493 , TA2494 , TA2495 , TA2501 , BC337 , TA2511 , TA2512 , TA2513 , TA2514 , TA2551 , TA2606 , TA2616 , TA2658 .

History: CHFMA9GP | 2SC410 | TIX1393 | PN5140 | T2679 | MMBT9015C | ECG103A

Keywords - TA2510 transistor datasheet

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