TA2510 Datasheet. Specs and Replacement
Type Designator: TA2510 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 35 W
Maximum Collector-Base Voltage |Vcb|: 250 V
Maximum Collector-Emitter Voltage |Vce|: 175 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 10 MHz
Forward Current Transfer Ratio (hFE), MIN: 40
Package: TO66
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TA2510 Substitution
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TA2510 datasheet
2STA2510 High power PNP epitaxial planar bipolar transistor Features High breakdown voltage VCEO = -100 V Complementary to 2STC2510 Typical ft = 20 MHz Fully characterized at 125 oC 3 2 Application 1 TO-3P Audio power amplifier Description Figure 1. Internal schematic diagram The device is a PNP transistor manufactured using new BiT-LA (Bipolar transistor fo... See More ⇒
Detailed specifications: TA2468A, TA2469A, TA2470, TA2492, TA2493, TA2494, TA2495, TA2501, 2SA1943, TA2511, TA2512, TA2513, TA2514, TA2551, TA2606, TA2616, TA2658
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