TA2512 Datasheet. Specs and Replacement

Type Designator: TA2512  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 35 W

Maximum Collector-Base Voltage |Vcb|: 500 V

Maximum Collector-Emitter Voltage |Vce|: 300 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 2 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Transition Frequency (ft): 10 MHz

Forward Current Transfer Ratio (hFE), MIN: 25

Noise Figure, dB: -

Package: TO66

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TA2512 datasheet

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TA2512

2STA2510 High power PNP epitaxial planar bipolar transistor Features High breakdown voltage VCEO = -100 V Complementary to 2STC2510 Typical ft = 20 MHz Fully characterized at 125 oC 3 2 Application 1 TO-3P Audio power amplifier Description Figure 1. Internal schematic diagram The device is a PNP transistor manufactured using new BiT-LA (Bipolar transistor fo... See More ⇒

Detailed specifications: TA2470, TA2492, TA2493, TA2494, TA2495, TA2501, TA2510, TA2511, A1015, TA2513, TA2514, TA2551, TA2606, TA2616, TA2658, TA2714, TA2735

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