TA2513 Datasheet. Specs and Replacement

Type Designator: TA2513  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 25 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 60 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 7 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Transition Frequency (ft): 1 MHz

Forward Current Transfer Ratio (hFE), MIN: 3000

Noise Figure, dB: -

Package: TO3

  📄📄 Copy 

 TA2513 Substitution

- BJT ⓘ Cross-Reference Search

 

TA2513 datasheet

 9.1. Size:146K  st

 2sta2510.pdf pdf_icon

TA2513

2STA2510 High power PNP epitaxial planar bipolar transistor Features High breakdown voltage VCEO = -100 V Complementary to 2STC2510 Typical ft = 20 MHz Fully characterized at 125 oC 3 2 Application 1 TO-3P Audio power amplifier Description Figure 1. Internal schematic diagram The device is a PNP transistor manufactured using new BiT-LA (Bipolar transistor fo... See More ⇒

Detailed specifications: TA2492, TA2493, TA2494, TA2495, TA2501, TA2510, TA2511, TA2512, 13007, TA2514, TA2551, TA2606, TA2616, TA2658, TA2714, TA2735, TA2736

Keywords - TA2513 pdf specs

 TA2513 cross reference

 TA2513 equivalent finder

 TA2513 pdf lookup

 TA2513 substitution

 TA2513 replacement