TD650 Specs and Replacement

Type Designator: TD650

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 62.5 W

Maximum Collector-Base Voltage |Vcb|: 100 V

Maximum Collector-Emitter Voltage |Vce|: 100 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 8 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 750

Noise Figure, dB: -

Package: TO3

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TD650 datasheet

 0.1. Size:121K  samhop

 stu650s std650s.pdf pdf_icon

TD650

Green Product STU/D650S a S mHop Microelectronics C orp. Ver 1.0 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). RDS(ON) (m ) Max VDSS ID Rugged and reliable. 75 @ VGS=10V TO-252 and TO-251 Package. 16A 65V 97 @ VGS=4.5V G G S S STU SERIES STD SERIES ( ) TO - 252AA D- PAK ( ) TO - 25... See More ⇒

Detailed specifications: TD367C, TD643, TD644, TD645, TD646, TD647, TD648, TD649, BD140, TEC8012, TEC8012D, TEC8012E, TEC8012F, TEC8012G, TEC8012H, TEC8013, TEC8013D

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