TD650 Datasheet and Replacement
Type Designator: TD650
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 62.5 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 8 A
Max. Operating Junction Temperature (Tj): 200 °C
Forward Current Transfer Ratio (hFE), MIN: 750
Noise Figure, dB: -
Package: TO3
TD650 Substitution
TD650 Datasheet (PDF)
stu650s std650s.pdf

GreenProductSTU/D650SaS mHop Microelectronics C orp.Ver 1.0N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).RDS(ON) (m) MaxVDSS IDRugged and reliable.75 @ VGS=10VTO-252 and TO-251 Package.16A65V97 @ VGS=4.5VGGSSSTU SERIESSTD SERIES( )TO - 252AA D- PAK ( )TO - 25
Datasheet: TD367C , TD643 , TD644 , TD645 , TD646 , TD647 , TD648 , TD649 , 2SD718 , TEC8012 , TEC8012D , TEC8012E , TEC8012F , TEC8012G , TEC8012H , TEC8013 , TEC8013D .
History: TN4121 | 2SB1136S | RN2911FS | 2SC2759 | 2SB1119R | KTA1718L | 2SB1106
Keywords - TD650 transistor datasheet
TD650 cross reference
TD650 equivalent finder
TD650 lookup
TD650 substitution
TD650 replacement
History: TN4121 | 2SB1136S | RN2911FS | 2SC2759 | 2SB1119R | KTA1718L | 2SB1106



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