TI888 Datasheet. Specs and Replacement

Type Designator: TI888  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.8 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 30 V

Maximum Emitter-Base Voltage |Veb|: 2 V

Maximum Collector Current |Ic max|: 1.2 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Transition Frequency (ft): 150 MHz

Collector Capacitance (Cc): 25 pF

Forward Current Transfer Ratio (hFE), MIN: 25

Noise Figure, dB: -

Package: TO5

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TI888 datasheet

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Detailed specifications: TI813, TI814, TI815, TI876, TI884, TI885, TI886, TI887, 2222A, TI890, TI891, TI896, TI897, TI898, TI899, TI903, TI904

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