TI899 Datasheet. Specs and Replacement
Type Designator: TI899 📄📄
Material of Transistor: Ge
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.24 W
Maximum Collector-Base Voltage |Vcb|: 25 V
Maximum Collector-Emitter Voltage |Vce|: 15 V
Maximum Collector Current |Ic max|: 0.75 A
Max. Operating Junction Temperature (Tj): 100 °C
Electrical Characteristics
Collector Capacitance (Cc): 6 pF
Forward Current Transfer Ratio (hFE), MIN: 30
Package: TO5
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TI899 datasheet
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Detailed specifications: TI886, TI887, TI888, TI890, TI891, TI896, TI897, TI898, BC549, TI903, TI904, TI904A, TI905, TI910, TI951, TI952, TI953
Keywords - TI899 pdf specs
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