TI899 PDF Specs and Replacement
Type Designator: TI899
Material of Transistor: Ge
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.24 W
Maximum Collector-Base Voltage |Vcb|: 25 V
Maximum Collector-Emitter Voltage |Vce|: 15 V
Maximum Collector Current |Ic max|: 0.75 A
Max. Operating Junction Temperature (Tj): 100 °C
Electrical Characteristics
Collector Capacitance (Cc): 6 pF
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
Package: TO5
TI899 Substitution
TI899 PDF detailed specifications
NO PDF specs!
Detailed specifications: TI886 , TI887 , TI888 , TI890 , TI891 , TI896 , TI897 , TI898 , BC549 , TI903 , TI904 , TI904A , TI905 , TI910 , TI951 , TI952 , TI953 .
Keywords - TI899 pdf specs
TI899 cross reference
TI899 equivalent finder
TI899 pdf lookup
TI899 substitution
TI899 replacement
LIST
Last Update
BJT: GA1A4M | SBT42 | 2SA200-Y
Popular searches
a933 transistor datasheet | a1633 transistor | 2sa844 | 2sc1327 | 2sc3855 | 2sc945 transistor equivalent | 2sd427 | mje15032 equivalent

