All Transistors. TK33 Datasheet

 

TK33 Datasheet, Equivalent, Cross Reference Search


   Type Designator: TK33
   Material of Transistor: Ge
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.1 W
   Maximum Collector-Base Voltage |Vcb|: 30 V
   Maximum Collector-Emitter Voltage |Vce|: 12 V
   Maximum Emitter-Base Voltage |Veb|: 20 V
   Maximum Collector Current |Ic max|: 0.05 A
   Max. Operating Junction Temperature (Tj): 75 °C
   Transition Frequency (ft): 3 MHz
   Forward Current Transfer Ratio (hFE), MIN: 20
   Noise Figure, dB: -
   Package: X18

 TK33 Transistor Equivalent Substitute - Cross-Reference Search

   

TK33 Datasheet (PDF)

 0.1. Size:261K  toshiba
tk33s10n1z.pdf

TK33
TK33

TK33S10N1ZMOSFETs Silicon N-channel MOS (U-MOS-H)TK33S10N1ZTK33S10N1ZTK33S10N1ZTK33S10N1Z1. Applications1. Applications1. Applications1. Applications Automotive Switching Voltage Regulators Motor Drivers2. Features2. Features2. Features2. Features(1) AEC-Q101 qualified(2) Low drain-source on-resistance: RDS(ON) = 8.2 m (typ.) (VGS = 10 V)(3)

 0.2. Size:74K  ixys
ixtk33n45 ixtk33n50.pdf

TK33
TK33

 0.3. Size:92K  ixys
ixtk33n50.pdf

TK33
TK33

IXTK 33N50 VDSS = 500 VHigh CurrentID (cont) = 33 AMegaMOSTMFETRDS(on) = 0.17 N-Channel Enhancement ModePreliminary dataSymbol Test conditions Maximum ratings TO-264 AAVDSS TJ = 25C to 150C 500 VVDGR TJ = 25C to 150C; RGS = 1.0 M 500 VVGS Continuous 20 VVGSM Transient 30 VD (TAB)GDID25 TC = 25C 33 ASIDM TC = 25C, pulse

 0.4. Size:393K  first silicon
ftk3341.pdf

TK33
TK33

SEMICONDUCTOR FTK3341TECHNICAL DATADDESCRIPTION The FTK3341 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable Gfor use as a load switch or in PWM applications. SGENERAL FEATURES Schematic diagram VDS = -30V,ID = -4.2A RDS(ON)

 0.5. Size:377K  first silicon
ftk3341l.pdf

TK33
TK33

SEMICONDUCTOR FTK3341TECHNICAL DATADDESCRIPTION The FTK3341 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable Gfor use as a load switch or in PWM applications. SGENERAL FEATURES Schematic diagram VDS = -30V,ID = -4.2A RDS(ON)

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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