TL100 Datasheet, Equivalent, Cross Reference Search
Type Designator: TL100
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.75 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.6 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 50
Noise Figure, dB: -
Package: TO237
TL100 Transistor Equivalent Substitute - Cross-Reference Search
TL100 Datasheet (PDF)
stl100n1vh5.pdf
STL100N1VH5N-channel 12 V, 0.0022 , 25 A PowerFLAT (5x6)STripFET V Power MOSFETFeaturesRDS(on) Order code VDSS IDmax.STL100N1VH5 12 V
stl100n10f7.pdf
STL100N10F7N-channel 100 V, 0.0062 typ., 19 A, STripFET VII DeepGATE Power MOSFET in a PowerFLAT 5x6 packageDatasheet - production dataFeaturesRDS(on) Order code VDSS max ID PTOT1STL100N10F7 100 V 0.0073 19 A 5 W234 Ultra low on-resistancePowerFLAT 5x6 100% avalanche testedApplications Switching applicationsDescriptionFigure 1. Int
stl100n6lf6.pdf
STL100N6LF6N-channel 60 V, 3.3 m typ., 25 A STripFET VI DeepGATE Power MOSFET in a PowerFLAT 5x6 packageDatasheet - production dataFeaturesOrder code VDS RDS(on) max IDSTL100N6LF6 60 V 4.4 m 25 A Low gate charge12 Very low on-resistance34 High avalanche ruggednessPowerFLAT 5x6Applications Switching applicationsDescriptionFigure 1.
stl100nh3ll.pdf
STL100NH3LLN-channel 30 V - 0.0032 - 25 A - PowerFLAT (6x5)STripFET III Power MOSFETFeaturesRDS(on)Type VDSS IDmaxSTL100NH3LL 30 V
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
