TN2102 Datasheet. Specs and Replacement
Type Designator: TN2102 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 1.2 W
Maximum Collector-Base Voltage |Vcb|: 120 V
Maximum Collector-Emitter Voltage |Vce|: 65 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 60 MHz
Collector Capacitance (Cc): 15 pF
Forward Current Transfer Ratio (hFE), MIN: 40
Package: TO237
TN2102 Substitution
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TN2102 datasheet
Advance Technical Information TrenchPTM VDSS = -100V IXTN210P10T Power MOSFET ID25 = - 210A RDS(on) 7.5m trr 200ns P-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier miniBLOC E153432 S G Symbol Test Conditions Maximum Ratings S VDSS TJ = 25 C to 150 C -100 V D VDGR TJ = 25 C to 150 C, RGS = 1M ... See More ⇒
Supertex inc. TN2106 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description Free from secondary breakdown This low threshold, enhancement-mode (normally-off) Low power drive requirement transistor utilizes a vertical DMOS structure and Supertex s Ease of paralleling well-proven, silicon-gate manufacturing process. This Low CISS and fast switching spe... See More ⇒
Detailed specifications: TMPTA42, TMPTA43, TN1613, TN1613A, TN1613R, TN1711, TN1893, TN1893R, D965, TN2107, TN2218, TN2218A, TN2219, TN2219A, TN2221, TN2221A, TN2221AR
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