All Transistors. TN2102 Datasheet

 

TN2102 Datasheet and Replacement


   Type Designator: TN2102
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 1.2 W
   Maximum Collector-Base Voltage |Vcb|: 120 V
   Maximum Collector-Emitter Voltage |Vce|: 65 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 60 MHz
   Collector Capacitance (Cc): 15 pF
   Forward Current Transfer Ratio (hFE), MIN: 40
   Noise Figure, dB: -
   Package: TO237
 

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TN2102 Datasheet (PDF)

 9.1. Size:178K  ixys
 ixtn210p10t.pdf pdf_icon

TN2102

Advance Technical InformationTrenchPTM VDSS = -100VIXTN210P10TPower MOSFET ID25 = - 210A RDS(on) 7.5m trr 200nsP-Channel Enhancement ModeAvalanche RatedFast Intrinsic RectifierminiBLOCE153432SGSymbol Test Conditions Maximum RatingsSVDSS TJ = 25C to 150C -100 VDVDGR TJ = 25C to 150C, RGS = 1M

 9.2. Size:716K  supertex
 tn2106.pdf pdf_icon

TN2102

Supertex inc. TN2106N-Channel Enhancement-ModeVertical DMOS FETFeatures General Description Free from secondary breakdown This low threshold, enhancement-mode (normally-off) Low power drive requirement transistor utilizes a vertical DMOS structure and Supertexs Ease of paralleling well-proven, silicon-gate manufacturing process. This Low CISS and fast switching spe

Datasheet: TMPTA42 , TMPTA43 , TN1613 , TN1613A , TN1613R , TN1711 , TN1893 , TN1893R , NJW0281G , TN2107 , TN2218 , TN2218A , TN2219 , TN2219A , TN2221 , TN2221A , TN2221AR .

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